AS4C4M16S-6TINTR Allicdata Electronics
Allicdata Part #:

AS4C4M16S-6TINTR-ND

Manufacturer Part#:

AS4C4M16S-6TINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4...
DataSheet: AS4C4M16S-6TINTR datasheetAS4C4M16S-6TINTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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AS4C4M16S-6TINTR memories are widely used in many electronic devices, such as digital cameras, mobile phones, laptops, and desktop computers. This type of memory is specially designed to serve as a fast, non-volatile storage device that stores data in the form of magnetic bursts.The AS4C4M16S-6TINTR memory is composed of semiconductor materials with a core integrated silicon memory (SIM). The SIM core is comprised of a high voltage- tolerance transistors and capacitors, which interconnects sixteen densely packed groups (groups of 16 bit). The SIM core enables fast switching and multithreading capabilities.At the heart of the AS4C4M16S-6TINTR memory is an array of stacked cache-on-die (COD) structures. The COD structure helps to store and retain the data stored in the memory array. The COD structure is designed to provide up to 128 kilobits of data storage without compromising the response time.The AS4C4M16S-6TINTR memory also uses a multi-gigabit cell configuration to ensure fast response times. This multi-gigabit cell configuration is based on a two general memory cycle protocol. During each cycle, the memory array is divided into two portions – the product and the ground portion. In the first cycle, the product portion reads data from the memory array and writes data back to the product portion in the second cycle.The AS4C4M16S-6TINTR memory also uses a back-end proprietary temperature-tunable clocking technique to ensure reliable operation in high temperature environments. The clocking technique is designed to automatically adjust the frequency of the memory operations in order to prevent data loss or corruption.The AS4C4M16S-6TINTR memory also has an advanced error coding technology to help reduce the errors resulting from communication over long distances. This error coding technology uses the RS232 and RS485 interfaces to ensure secure communication over long distances. The AS4C4M16S-6TINTR memory offers low power consumption, high reliability, and fast data rates. Its combination of features make it an ideal choice for a wide variety of data storage applications, including mobile phones, digital cameras, notebooks, and desktop computers.

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