AS4C4M32S-6BIN

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	128Mb (4M x 32)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	2ns
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	90-TFBGA
Supplier Device Package:	90-TFBGA (8x13)

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Introduction AS4C4M32S-6BIN is a memory IC that is used in a variety of different applications. It is a natural evolution of earlier SDRAM technologies, which have become increasingly popular in the market due to their ability to provide a wide range of capabilities in one single device. The combination of its size and power-saving architecture have made the AS4C4M32S-6BIN a go-to choice for many applications.Architecture The AS4C4M32S-6BIN memory IC is composed of four independent banks and utilizes a DDR-2 interface, which maximizes data transfer speeds. The four banks are actually composed of two sets of two banks that share a common clock. Each of the four banks contains sixteen 16-bit words, which can be read and written independently. The device is organized into a 128Kb page size, with each page consisting of 256 bytes. This provides the flexibility to access two or four bits of data at once, while also allowing for larger chunks of data to be accessed when needed. Power/Signal SystemThe AS4C4M32S-6BIN utilizes low voltage differential signaling (LVDS) during normal operation. LVDS is a type of signal technology which has been designed to operate at a lower power than traditional signal systems. The AS4C4M32S-6BIN also supports an advanced power down mode, which reduces the power consumption of the device to 0.4 mW. This advanced power down mode is useful for applications that require extended battery life.Application Field The AS4C4M32S-6BIN is a popular choice for numerous applications, due to its combination of size and power savings. It is used in a variety of embedded systems, where its small size and low power consumption make it ideal for tight spaces. It is also used in industrial automation systems, where the requirement for high data transfer rates is met by its DDR-2 interface. Finally, the AS4C4M32S-6BIN is used in medical instruments and scientific applications, where its extended battery life is beneficial. Working Principle The AS4C4M32S-6BIN utilizes a simple procedure for reading and writing data. Data is accessed using registers, which control the banks of data. The address field indicates which bank of data is being accessed, as well as the specific address within the bank. A write enable signal is used to determine the data operation in progress. When the write enable signal is raised high, a write operation will occur, and when it is lowered, a read operation will take place. Once the data is accessed, it can then be used in a variety of ways, depending on the application.ConclusionThe AS4C4M32S-6BIN memory IC is a popular choice for a variety of applications, due to its combination of size, power savings, and fast data transfer rate. It has applications in embedded systems, industrial automation, medical instruments, and scientific applications, and is usable in a variety of ways thanks to its simple read and write procedure. With its advanced power saving features and its DDR-2 interface, the AS4C4M32S-6BIN is an ideal choice for many applications.

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