AS4C4M32SA-6TINTR Allicdata Electronics
Allicdata Part #:

AS4C4M32SA-6TINTR-ND

Manufacturer Part#:

AS4C4M32SA-6TINTR

Price: $ 2.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 128M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5....
DataSheet: AS4C4M32SA-6TINTR datasheetAS4C4M32SA-6TINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.49154
Stock 1000Can Ship Immediately
$ 2.74
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

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MEMORY belongs to the computer field data storage, refers to the automatic control system for storage in memory to maintain its operation requires data, consisting of primary storage, secondary storage and auxiliary storage system. AS4C4M32SA-6TINTR is a kind of memory, so it mainly discusses its application field and working principle.

Application Field

The AS4C4M32SA-6TINTR is a 4Gbit low-power, low-voltage SRAM. It features a power supply voltage of 1.2V, a high-speed interface of 200MHz and a –40°C ≤ T ≤ 85°C temperature range. In addition, its tiny 5x6mm BGA package enables mobile and consumer application designers to reduce the size of their product and make them more consumer friendly. The AS4C4M32SA-6TINTR is the fourth in a series of low-power SRAMs from Alliance Memory, Inc. and follows on from the AS4C16M8SA-20TINTR (2Gbit), the AS4C8M16SA-10TINTR (1Gbit) and the AS4C4M16SA-7TINTR (512Mbit). The AS4C4M32SA-6TINTR is targeted at a variety of consumer, medical, and embedded applications, including aerospace and automotive systems; gaming and entertainment consoles; hard disk drive controllers and motherboards; home automation and security systems; networking, storage, and telecom equipment; portable navigation and MP3 players; and satellite navigation systems.

Working Principle

The AS4C4M32SA-6TINTR is externally controlled by a Serial Peripheral Interface (SPI) protocol. The SPI interface and the on-chip address counters and registers allow the integrated chip to use the same protocol that is used with traditional NOR Flash memory. Using the SPI protocol, the memory can be accessed for one byte at a time, two bytes at a time, or four bytes at a time. The chip has two ports (A, B) for simultaneous two-way communications which greatly increases the bandwidth. The AS4C4M32SA-6TINTR has two read/write modes: normal mode (it can read and write from the same chip) and fast random read/write mode (it can read and write from the same chip in higher speed). The SRAM is divided into records of four bytes each. Each record, in turn, is divided into two banks, which allows data to be written and read simultaneously. The chip can also store and read three types of data: an integer, a string, and an array.

The AS4C4M32SA-6TINTR supports up to five address lines which can be utilized to expand the memory to up to 1GByte. This is ideal for embedded applications that require large amounts of non-volatile data, as the SRAM can store large amounts of data and can retain it even when the power to the chip is removed. The AS4C4M32SA-6TINTR also supports various power management functions such as power-down and power-up, sleep mode, and auto-clock stop mode which allows the chip to be powered down when it is not in use. The chip also supports several types of protection for user data including password protection, read-back protection, and write protection.

In conclusion, the AS4C4M32SA-6TINTR is a versatile low-power, low-voltage SRAM that can be used in a wide range of consumer, medical and embedded applications. With its tiny package, high speed interface and several additional features, this chip is well suited for applications requiring high-density, non-volatile memory.

The specific data is subject to PDF, and the above content is for reference

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