AS4C64M16MD1-5BIN

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AS4C64M16MD1-5BIN Application Field and Working Principle

Memory is used in numerous electronics and computing applications. AS4C64M16MD1-5BIN is a synchronous DRAM that is mainly used for main memory applications in desktop and mobile computing applications. It is also used as buffer memory in enterprise storage systems.

The AS4C64M16MD1-5BIN is a 512 megabit (64M×8 bits) dynamic random-access memory (DRAM) device constructed with AS4C16M16D1A-5BIN technology. This technology includes advanced features such as 2.5V supply voltage, burst mode operation, multiplexed address/data bus and serial presence detect (SPD). This device is organized as 65536 words by 8 bits and is designed to operate with a clock frequency of up to 133MHz. The device accepts both rising and falling edge data strobes. The data bus consists of eight bidirectional drivers that can be multiplexed to eight addressinputs.

AS4C64M16MD1-5BIN is capable of data transfer which is twice the rate of the traditional DRAM operation. It contains an on-chip memory bank that can be used as either a single bank of 1Mb (128K×8) or four banks of 256Kb (32K×8). The device supports burst lengths of four (BL4) or eight (BL8) for burst read/write operations. The device also supports Burst Chop (BC) and Burst Interleave (BI) burst operation formats. Burst Chop reduces the effective burst length while Burst Interleave increases the burst operation rate.

The AS4C64M16MD1-5BIN also offers a Serial Presence Detect (SPD) feature which is used for detection of DRAM characteristics. The addition of SPD makes system configuration easier and faster by providing important information about the DRAM such as the manufacturer, the type of DRAM, the speed grade, the density, and the configurable parameters.

The operation of the AS4C64M16MD1-5BIN is initiated by programming and assertion of the corresponding signals. The read and write operations turn the synchronous DRAM on, and also determine the type of operation. The data bus transfers data in read and write operations during the active cycle. The write operation stores the data on the specified address and the read operation retrieves the data from the specified address and sends it out on the data bus.

The AS4C64M16MD1-5BIN synchronous DRAM offers improved performance, power and cost effectiveness over other types of DRAMs. The high speed, low power consumption and low redundancy characteristics of the synchronous DRAM makes it suitable for a wide range of applications like consumer electronics, industrial equipment, audio-video systems, and computer systems. It is also a suitable choice for embedded applications such as hard disk drives, digital cameras, and gaming consoles.

In summary, the AS4C64M16MD1-5BIN synchronous DRAM device is an excellent choice for a wide range of applications that require high performance and low power consumption. It offers good data transfer rates and burst operation formats. The addition of Serial Presence Detect (SPD) makes system configuration faster and easier. It is an ideal choice for consumer electronics, industrial equipment, audio-video systems, computer systems, digital cameras and gaming consoles.

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