AS4C8M16S-7BCNTR

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AS4C8M16S-7BCNTR is a type of memory developed by Alliance Memory, a leading supplier of high-performance memory semiconductor products. The AS4C8M16S-7BCNTR is a low-power, high-density CMOS static RAM typically used in consumer electronics products such as TVs, digital cameras, and game consoles. The device features very low standby power, high access speed and a wide operating temperature range.

The AS4C8M16S-7BCNTR provides 16M bits of storage in a single TSOP-II package and is designed to operate at 3.3V±0.3V. The device is organized as 512K x 32, which allows for faster 128-byte page writes and burst accesses. It also has a number of features that make it easy to use, such as a programmable WE# pin and a user-controlled DQS# pin to enable burst and page mode accesses.

The device is also very reliable, with a retry timeout feature that reduces power consumption during hermetic sealing operations. It also supports auto-refresh operation as well as auto-power-down modes. It also incorporates an array of integrated power-saving features that help to extend the battery life of portable devices.

In terms of its application field, this type of memory can be used in various consumer electronics products such as PDAs, smartphones, digital cameras, TV set-top boxes, and digital video recorders. It can also be used in industrial applications such as touch screens, industrial control panels, and vehicle infotainment systems.

The working principle behind the AS4C8M16S-7BCNTR memory device is relatively straightforward. It is a dynamic random-access memory (DRAM), which means it stores data in a location that is determined by a given address. When the memory is addressed, the memory cells corresponding to the address are activated. The data stored in the memory is then read from or written to these cells.

The AS4C8M16S-7BCNTR device operates in synchronous dynamic random access memory (SDRAM) mode. In this mode, the memory consists of an array of memory cells connected to sense amplifiers. Each memory cell contains a capacitor and a transistor. The capacitors are used to store the data, while the transistors are used to control the data access. When a memory location is addressed, the sense amplifier connected to that memory cell is activated and the data is read from the memory cell. The data is then transferred onto the internal data bus, which is used to transfer the data to the output pins.

The AS4C8M16S-7BCNTR is a high-performance memory device that offers excellent access speed and low power consumption. Its wide operating temperature range, reliability and power-saving features make it an ideal choice for a variety of applications. From consumer electronics products to industrial touch screens, the AS4C8M16S-7BCNTR is a versatile and reliable memory solution.

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