Allicdata Part #: | 1450-1264-ND |
Manufacturer Part#: |
AS4C8M16SA-6BIN |
Price: | $ 3.18 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 128M PARALLEL 54TFBGA |
More Detail: | SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5n... |
DataSheet: | AS4C8M16SA-6BIN Datasheet/PDF |
Quantity: | 391 |
1 +: | $ 2.88540 |
10 +: | $ 2.62143 |
25 +: | $ 2.56435 |
50 +: | $ 2.54999 |
100 +: | $ 2.28696 |
348 +: | $ 2.27841 |
696 +: | $ 2.19449 |
1044 +: | $ 2.08640 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 128Mb (8M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x8) |
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The application of AS4C8M16SA-6BIN
AS4C8M16SA-6BIN is a type of static random access memory (SRAM) that belongs to the family of Advanced Single Crystal (ASC) memory devices. It is a dual-port memory, which means it consists of two separate dynamic random access memories (DRAM) ports, each with independent write and read capabilities. The device is ideal for applications that require high-speed data exchange, such as memory-intensive applications such as video game systems, digital cameras, and medical imaging systems.
Working Principles of AS4C8M16SA-6BIN
The AS4C8M16SA-6BIN is composed of two separate ARAM cells that share a common I/O bus. Each cell contains an address register and an 8-bit data register. The address register specifies the address of the memory cell to be accessed, while the data register stores the data value associated with the cell. When the write operation is performed, the data value is written to the specified address and stored in the data register. The read operation reads the data stored in the memory cell and places it in the data register. The data value then becomes available to the rest of the system.
The AS4C8M16SA-6BIN is capable of executing a number of instructions, including read and write operations. The instructions are typically stored in special registers, which are referred to as instruction decoders. These decoders interpret the instruction code and direct the memory controller to execute the appropriate instruction. The device also includes an output buffer, which allows the system to read data directly from memory without having to perform an operation on the address bus.
In terms of its timing characteristics, the AS4C8M16SA-6BIN is capable of executing both synchronous and asynchronous commands. Synchronous operations occur in real-time, meaning the memory controller will wait until a given instruction is completed before it begins executing any other instruction. Asynchronous operations, however, can be executed in any order, depending on the availability of data and commands in the system.
Conclusion
The AS4C8M16SA-6BIN static random access memory (SRAM) device is an ideal solution for applications that require fast data exchange. It offers two independent dynamic random access memories (DRAM) ports, both of which can be used to perform read and write operations. It also includes an instruction decoder and an output buffer to allow for the execution of both synchronous and asynchronous commands. This makes it a versatile and reliable memory component for a variety of applications.