Allicdata Part #: | BA783S-E3-08-ND |
Manufacturer Part#: |
BA783S-E3-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE BAND SW 100MA SOD323 |
More Detail: | RF Diode PIN - Single 35V 100mA SOD-323 |
DataSheet: | BA783S-E3-08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.2pF @ 3V, 1MHz |
Resistance @ If, F: | 1.2 Ohm @ 3mA, 1GHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BA783S-E3-08 is a high speed, ultra-low power Schottky diode which belongs to the category of RF (Radio Frequency). It offers a fast switching action with low capacitance, which make it a prime choice in applications that require reliable, high speed, low power switching.
Its small package size and low power capabilities make it a popular choice for mobile applications and battery operated products. The device is also suitable for digital and RF applications, such as wireless communication systems, mobile base stations, WLAN wireless data links and wireless broadcast devices.
BA783S-E3-08 applications include RF switches, band-stop filters, harmonic generators, pulse generators and oscillators. The device can also be used in low loss multimedia and audio amplifiers, because of its low power and low leakage current requirements. The low leakage current of the device makes it a perfect choice for GSM applications.
The working principle of BA783S-E3-08 is based on the Schottky barrier phenomenon. A Schottky barrier is created when a metal conductor and a semiconductor are placed in contact. The barrier voltage, which is created between the two materials, is caused by the difference in the work function of the metal and semiconductor. When a voltage is applied across the Schottky pair, current flows through the Schottky barrier since electrons and holes can tunnel through the barrier. Since the electrons have low thermal velocity, the device can respond very quickly to changes in the applied voltage.
The BA783S-E3-08 also has temperature stability and a low noise figure. The device performs very well in low voltage applications and is a reliable switching element in high frequency applications with low power consumption. Its low capacitance and low leakage current make it an ideal choice for applications that require fast switching and low power.
As the market for low power, low noise, small size and high frequency applications has been increasing, the BA783S-E3-08 has become more and more popular. Its ability to switch quickly and at low power makes it a prime choice for a wide variety of applications. Its superior performance and low power capabilities make it a great choice for mobile applications and battery-powered products.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BA783-G3-18 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
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BA783S-E3-18 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA783S-G3-18 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
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BA782-E3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA782-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA782-HE3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA782-HG3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA782S-E3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA782S-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA782S-HE3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA783-E3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA783-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA783-HE3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA783-HG3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD12... |
BA783S-E3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA783S-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
BA783S-HE3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE BAND SW 100MA SOD32... |
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