BA783-HG3-18

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BA783-HG3-18 is a diode in the RF (Radio Frequency) series typically used for operating in high frequency range.

It provides a variety of electrical characteristics, including low capacitance and low noise. The device is usually used for high frequency applications such as RF amplifiers and radio receivers. It also finds use in radio transmitters and radiofrequency filters.

The BA783-HG3-18 is an avalanche diode that provides good switching performance and low capacitance. The device has a doping profile which enables it to provide a sharp transition speed and good thermal performance. The device also features good linearity and a low breakdown voltage.

The device is designed to operate over a wide range of frequencies, ranging from 0 – 1500 MHz. It is typically used for high-frequency applications such as radio receivers, microwave transmitters and repeaters, and long-distance radio links. It is also used for radiofrequency filters and amplifiers.

The working principle of the BA783-HG3-18 is based on the physical principle of tunnel diodes. This type of diode can operate in reverse bias and help in amplifying signals. The device also helps in reducing noise levels in sensitive applications.

Tunnel diodes are formed by heavily doped semiconductor material. These materials have a large number of majority carriers which are available for current flow. When an electric field is applied, these carriers tunnel through their energy gap to the other side of the junction. This process produces a reverse voltage wave which can help to amplify signals.

In addition, tunnel diodes also exhibit sharp attenuation and recovery characteristics. This makes them suitable for use in applications where there is a need for reliable signal reception as well as high-speed switching.

The BA783-HG3-18 is specifically designed for high-frequency applications. It has an operating temperature range of -40°C to +85°C and a maximum reverse voltage of 700V. The device also has a peak power dissipation of 2W. It is suitable for use in a wide range of high-frequency applications.

In conclusion, the BA783-HG3-18 is a diode in the RF series. It is usually used for high-frequency applications such as radio receivers, long-distance radio links, microwave transmitters and repeaters, and RF filters and amplifiers. The working principle of the device is based on the principle of tunnel diodes. It has a wide range of applications and a peak power dissipation of 2W. This makes it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference