BAP64-05W-TP Allicdata Electronics

BAP64-05W-TP Discrete Semiconductor Products

Allicdata Part #:

BAP64-05W-TPMSTR-ND

Manufacturer Part#:

BAP64-05W-TP

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE RF PIN 175V 100MA SOT323
More Detail: RF Diode PIN - 1 Pair Common Cathode 175V 100mA 20...
DataSheet: BAP64-05W-TP datasheetBAP64-05W-TP Datasheet/PDF
Quantity: 6000
3000 +: $ 0.06577
6000 +: $ 0.06212
15000 +: $ 0.05664
30000 +: $ 0.05298
75000 +: $ 0.04750
Stock 6000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 175V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: BAP64-05
Description

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Diodes are the building blocks of RF circuitry. RF diodes come in a variety of sizes, packages, and configurations, and can be used to construct complex RF circuits. Designed for radio frequency (RF) applications, the BAP64-05W-TP is one such diode specially designed for power switching and high frequency signal processing applications. This article will discuss the application field and working principle of the BAP64-05W-TP.

The BAP64-05W-TP is a planar Schottky barrier rectifier, designed for applications with frequencies up to 200MHz. This type of diode is optimized for high frequency operation and is ideal for use in signal processing and power switching applications. The small size of the diode allows for a more compact design and improved performance.

Due to its high efficiency and high switching speed, the BAP64-05W-TP is ideal for applications where power consumption is an issue. The device is capable of switching signals up to 200MHz and can handle power levels up to but not exceeding 30W. This makes it suitable for low power switching applications, such as audio amplifiers, automotive electronics, and radio receivers.

The working principle of the BAP64-05W-TP is based on the operation of a Schottky barrier rectifier. A Schottky barrier rectifier consists of a p-type semiconductor and an n-type semiconductor connected in parallel. One side of the p-type and n-type semiconductor is connected to a common connection point, and the other side is connected to the diode itself. When a voltage is applied to the diode, the n-type semiconductor provides a forward bias, and the p-type provides a reverse bias. The combination of the two creates a low voltage current which flows in one direction.

Additionally, the BAP64-05W-TP features an integrated temperature compensation circuit which helps to reduce the effects of temperature variations. This circuitry helps to ensure that the device operates within the optimum voltage range, regardless of ambient temperature.

In summary, the BAP64-05W-TP is a planar Schottky barrier rectifier specially designed for high frequency, low power applications such as audio amplifiers, automotive electronics and radio receivers. The integrated temperature compensation circuit ensures that the device operates within the optimal voltage range, making it an ideal choice for power switching and signal processing applications. The high switching speed and high efficiency make it a great choice for low power applications.

The specific data is subject to PDF, and the above content is for reference

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