BAP64-05,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1933-2-ND |
Manufacturer Part#: |
BAP64-05,215 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 175V 100MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 175V 100mA 25... |
DataSheet: | BAP64-05,215 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.06237 |
6000 +: | $ 0.05891 |
15000 +: | $ 0.05371 |
30000 +: | $ 0.05024 |
75000 +: | $ 0.04608 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 175V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 20V, 1MHz |
Resistance @ If, F: | 1.35 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAP64-05 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAP64-05,215 RF diode is a type of active device that is used in a wide range of applications. This device is capable of acting as a switch and an amplifier in many RF applications and is often used as an amplifier in radar systems, communication systems and various other RF-based systems. This device is also capable of suppressing noise, eliminating cross-over distortion, and increasing operational bandwidths. This makes the BAP64-05,215 an ideal active device for a variety of wireless applications.
The device is based on a three-terminal structure with a top electrode, a gate electrode, and a base terminal. The top electrode is connected to the base terminal, and the gate electrode is connected to the base terminal via a conductor. The base terminal acts as a control element and the voltage applied to it determines whether the device is in its on or off state. A small current is then passed through the device and the voltage required to cause the device to switch between these two states is known as the “threshold voltage”.
In order to activate an RF signal, current is applied to the top electrode, while the gate electrode is held at ground potential. This results in a low-frequency signal on the gate electrode and an amplified signal at the base terminal. The base terminal can then be used to control the signal gain. The signal passes through the device at a frequency controlled by the amplification of the signal, and the gain of the signal can be precisely set by adjusting the voltage on the base terminal.
The BAP64-05,215 is also capable of providing high-power transmissions with excellent signal-to-noise ratios. This makes it the ideal choice for a variety of communication or radar applications. The device can also be used in combination with other active analog or RF components to increase system efficiency and overall performance.
The BAP64-05,215 is also highly reliable and can handle a wide range of temperatures, making it suited for use in high-power applications such as in high-frequency transmitters. Furthermore, the device uses low supply voltages and consumes very little power, making it suitable for battery-powered applications.
In addition to being an extremely versatile active device, the BAP64-05,215 is also one of the most reliable RF diodes available on the market today. It is highly durable, capable of operating in extreme temperatures, and is extremely resistant to shock and vibration. It is a perfect choice for any RF application that requires reliability and accuracy.
The specific data is subject to PDF, and the above content is for reference
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