BAP65LX,315 Discrete Semiconductor Products |
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Allicdata Part #: | 568-13512-2-ND |
Manufacturer Part#: |
BAP65LX,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE SILICON PIN SOD-882T |
More Detail: | RF Diode PIN - Single 30V 100mA 135mW SOD2 |
DataSheet: | BAP65LX,315 Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.04883 |
30000 +: | $ 0.04568 |
50000 +: | $ 0.04190 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.37pF @ 20V, 1MHz |
Resistance @ If, F: | 350 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 135mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | SOD2 |
Base Part Number: | BAP65 |
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The BAP65LX,315 diode is a practical, reliable, and cost-effective surface mount technology based on reverse biased Schottky Barrier diodes. Used mainly in the field of RF communication, the BAP65LX,315 is commonly found in wireless transceivers, cellular base stations, satellite communications systems, Wi-Fi telemetry, and more. But what exactly is the BAP65LX,315 and how does it work?
The BAP65LX,315 diode is a medium power general-purpose Schottky diode that uses a reverse biased Schottky barrier to create a rectifying junction. This rectifying junction (also known as a depletion region) acts as an electrical insulator, allowing electricity to flow only in one direction. When a voltage is applied, electrons can travel through the depletion layer only if the forward voltage exceeds the specified breakdown voltage. This process creates an electrical current.
The BAP65LX,315 diode also utilizes a PN junction diode, consisting of p-type and n-type semiconductor regions. This PN junction enables the diode to act as an electronic switch and regulate the flow of current. The reverse biased Schottky barrier of the BAP65LX,315 also helps to reduce conduction losses, while the PN junction diode helps to provide superior temperature characteristics.
As previously mentioned, the BAP65LX,315 diode has a wide range of applications in the field of RF communication. It can be used in wireless transceivers, cellular base stations, satellite communications systems, and Wi-Fi telemetry for low-noise amplification, power level conversion, and mixing. It is also used for high-frequency direct current rectification, voltage regulation, and other analog and digital applications.
The BAP65LX,315 diode is a reliable and efficient electrical device that can be used in a wide variety of RF communication applications. With its reverse biased Schottky Barrier and PN junction diode, it is able to regulate the flow of current and provide superior temperature characteristics. It is a practical and cost-effective solution for many RF communication applications and electronic switches.
The specific data is subject to PDF, and the above content is for reference
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