BAP65LX,315 Allicdata Electronics

BAP65LX,315 Discrete Semiconductor Products

Allicdata Part #:

568-13512-2-ND

Manufacturer Part#:

BAP65LX,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE SILICON PIN SOD-882T
More Detail: RF Diode PIN - Single 30V 100mA 135mW SOD2
DataSheet: BAP65LX,315 datasheetBAP65LX,315 Datasheet/PDF
Quantity: 10000
10000 +: $ 0.04883
30000 +: $ 0.04568
50000 +: $ 0.04190
Stock 10000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 100mA
Capacitance @ Vr, F: 0.37pF @ 20V, 1MHz
Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
Power Dissipation (Max): 135mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: SOD2
Base Part Number: BAP65
Description

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The BAP65LX,315 diode is a practical, reliable, and cost-effective surface mount technology based on reverse biased Schottky Barrier diodes. Used mainly in the field of RF communication, the BAP65LX,315 is commonly found in wireless transceivers, cellular base stations, satellite communications systems, Wi-Fi telemetry, and more. But what exactly is the BAP65LX,315 and how does it work?

The BAP65LX,315 diode is a medium power general-purpose Schottky diode that uses a reverse biased Schottky barrier to create a rectifying junction. This rectifying junction (also known as a depletion region) acts as an electrical insulator, allowing electricity to flow only in one direction. When a voltage is applied, electrons can travel through the depletion layer only if the forward voltage exceeds the specified breakdown voltage. This process creates an electrical current.

The BAP65LX,315 diode also utilizes a PN junction diode, consisting of p-type and n-type semiconductor regions. This PN junction enables the diode to act as an electronic switch and regulate the flow of current. The reverse biased Schottky barrier of the BAP65LX,315 also helps to reduce conduction losses, while the PN junction diode helps to provide superior temperature characteristics.

As previously mentioned, the BAP65LX,315 diode has a wide range of applications in the field of RF communication. It can be used in wireless transceivers, cellular base stations, satellite communications systems, and Wi-Fi telemetry for low-noise amplification, power level conversion, and mixing. It is also used for high-frequency direct current rectification, voltage regulation, and other analog and digital applications.

The BAP65LX,315 diode is a reliable and efficient electrical device that can be used in a wide variety of RF communication applications. With its reverse biased Schottky Barrier and PN junction diode, it is able to regulate the flow of current and provide superior temperature characteristics. It is a practical and cost-effective solution for many RF communication applications and electronic switches.

The specific data is subject to PDF, and the above content is for reference

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