BAP64LX,315 Allicdata Electronics

BAP64LX,315 Discrete Semiconductor Products

Allicdata Part #:

568-14497-2-ND

Manufacturer Part#:

BAP64LX,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE SILICON PIN SOD-882T
More Detail: RF Diode PIN - Single 60V 100mA 150mW SOD2
DataSheet: BAP64LX,315 datasheetBAP64LX,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04032
30000 +: $ 0.03780
50000 +: $ 0.03352
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 60V
Current - Max: 100mA
Capacitance @ Vr, F: 0.3pF @ 20V, 1MHz
Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 150mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: SOD2
Base Part Number: BAP64L
Description

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Diodes are essential components in electronics devices, and RF diodes play an important role in radio frequency applications. The BAP64LX, 315 is a RF diode that offers superior quality for high-frequency use. It is used in a variety of circuits that include: voltage-controlled oscillators, crystal oscillators, frequency multipliers of microwave equipment, noise reduction systems, switched amplifiers, and more.

The BAP64LX, 315 is a single-ended, two-terminal diode, available as a surface-mount device. It is a three-layer planar diode specifically designed for high-frequency operation. One of the main features of this diode is its low capacitance between its terminals. This ensures low cross-coupling effects between input and output lines, with minimized phase shift and distortion. The BAP64LX, 315 also offers a wide application range, from 0.8 to 4 GHz, and an excellent frequency response of -1 dB. Lastly, it boasts high RF power handling of up to 5 W.

The BAP64LX, 315’s working principle is very simple. As with other RF diodes, it works by exploiting the properties of PN junctions. It has two terminals, an anode and a cathode. When the anode is connected to a positive voltage, the diode is forward-biased, allowing current to flow from the anode to the cathode, and when the anode is connected to a negative voltage, the diode is reverse-biased, blocking the current flow.

The BAP64LX, 315 is ideal for applications in which performance and size are important, such as low-noise amplifiers and microwave relay receivers. It offers superior switching behavior, which can be used to create fast-switching, high-power circuitry. It is also capable of withstanding large RF powers of up to 5 W, making it a highly reliable choice.

In conclusion, the BAP64LX, 315 RF diode is an ideal solution for high-frequency applications. This three-layer planar diode offers excellent frequency response, low capacitance, and high power handling. It is highly reliable and suitable for a variety of circuitry applications, such as voltage-controlled oscillators, crystal oscillators, frequency multipliers, and more.

The specific data is subject to PDF, and the above content is for reference

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