BAP64LX,315 Discrete Semiconductor Products |
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Allicdata Part #: | 568-14497-2-ND |
Manufacturer Part#: |
BAP64LX,315 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE SILICON PIN SOD-882T |
More Detail: | RF Diode PIN - Single 60V 100mA 150mW SOD2 |
DataSheet: | BAP64LX,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04032 |
30000 +: | $ 0.03780 |
50000 +: | $ 0.03352 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 60V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 20V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | SOD2 |
Base Part Number: | BAP64L |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are essential components in electronics devices, and RF diodes play an important role in radio frequency applications. The BAP64LX, 315 is a RF diode that offers superior quality for high-frequency use. It is used in a variety of circuits that include: voltage-controlled oscillators, crystal oscillators, frequency multipliers of microwave equipment, noise reduction systems, switched amplifiers, and more.
The BAP64LX, 315 is a single-ended, two-terminal diode, available as a surface-mount device. It is a three-layer planar diode specifically designed for high-frequency operation. One of the main features of this diode is its low capacitance between its terminals. This ensures low cross-coupling effects between input and output lines, with minimized phase shift and distortion. The BAP64LX, 315 also offers a wide application range, from 0.8 to 4 GHz, and an excellent frequency response of -1 dB. Lastly, it boasts high RF power handling of up to 5 W.
The BAP64LX, 315’s working principle is very simple. As with other RF diodes, it works by exploiting the properties of PN junctions. It has two terminals, an anode and a cathode. When the anode is connected to a positive voltage, the diode is forward-biased, allowing current to flow from the anode to the cathode, and when the anode is connected to a negative voltage, the diode is reverse-biased, blocking the current flow.
The BAP64LX, 315 is ideal for applications in which performance and size are important, such as low-noise amplifiers and microwave relay receivers. It offers superior switching behavior, which can be used to create fast-switching, high-power circuitry. It is also capable of withstanding large RF powers of up to 5 W, making it a highly reliable choice.
In conclusion, the BAP64LX, 315 RF diode is an ideal solution for high-frequency applications. This three-layer planar diode offers excellent frequency response, low capacitance, and high power handling. It is highly reliable and suitable for a variety of circuitry applications, such as voltage-controlled oscillators, crystal oscillators, frequency multipliers, and more.
The specific data is subject to PDF, and the above content is for reference
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