BAP65-02,115 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BAP65-02,115 is an RF diode that is optimized for low noise, high gain, and low distortion applications. It is designed to be used in high-end applications, such as broadcast radio, cable TV, cellular radio, point-to-point radios, and satellite communications. The diode is rated for 115V, and is designed for a 15V bias.

The BAP65-02,115 is a multi-layer silicon-based planar Schottky barrier diode. This type of diode has a Schottky contact structure where the metal contacting the silicon is of varying widths. The resulting structure has a very low capacitance when the RF voltage is applied, which makes it ideal for high-frequency applications. Additionally, the metal contact has a high-transparency coefficient, which makes it ideal for high-frequency applications. The diode also has a low noise figure and low distortion.

The BAP65-02,115 has a variety of applications, including the following: broadcast radio, satellite communications, point-to-point radio, cellular radio, and cable TV. In broadcast radio applications, the diode can be used for detecting FM, AM, and DAB signals. In satellite communications, it can be used for frequency multiplication, upconversion, and downconversion. In point-to-point radio applications, the diode is used for filtering, modulation, and amplification. And in cellular radio applications, the diode can be used for upconversion and downconversion, as well as filtering and modulation.

The working principle of the BAP65-02,115 is based on the Schottky barrier diode principle. When a radio frequency voltage is applied, the diode conducts current between the two metal contacts. This is achieved because the Schottky contact has a low barrier voltage, which means that when a positive voltage is applied, the diode will conduct current. The resistance of the diode is dependent on the applied voltage, and it can be used to control the gain, bandwidth, and distortion of the signal.

The operating characteristics of the BAP65-02,115 are affected by its bias voltage. When the bias voltage is increased, the diode will operate with a higher current and gain, and a lower noise figure. It is important to note that the diode should not be biased higher than the rated voltage. Also, the diode\'s bias voltage should not exceed the voltage rating of the circuit. It is also important to note that the performance of the diode is affected by temperature, so the bias voltage should be adjusted accordingly.

The BAP65-02,115 is a versatile and high-performance RF diode that can be used in a variety of applications. It is designed for low noise, high gain, and low distortion applications, and is ideal for broadcast radio, cable TV, cellular radio, point-to-point radios, and satellite applications. The diode uses a multi-layer planar Schottky barrier diode principle to achieve its low capacitance and high-transparency characteristics, and its performance is affected by its bias voltage.

The specific data is subject to PDF, and the above content is for reference