BAP64-03,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1930-2-ND |
Manufacturer Part#: |
BAP64-03,115 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 175V 100MA SOD-323 |
More Detail: | RF Diode PIN - Single 175V 100mA 500mW SOD-323 |
DataSheet: | BAP64-03,115 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05458 |
6000 +: | $ 0.04973 |
15000 +: | $ 0.04487 |
30000 +: | $ 0.04245 |
75000 +: | $ 0.03832 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 175V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 20V, 1MHz |
Resistance @ If, F: | 1.35 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 500mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | BAP64 |
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.)Diodes - RF
The BAP64-03,115 diode is a device used for RF (Radio Frequency) applications. It is a two-terminal semiconductor device that can be used in a variety of ways and has many different applications, including switching, signal mixing, and voltage regulation. This diode offers outstanding performance over a wide frequency range, making it an ideal choice for a wide range of needs.
The primary function of the BAP64-03,115 is to provide rectification of AC voltage, which is the process of converting alternating to direct current. This diode can be used in both linear and switching applications to convert AC to DC. It can also be used in signal switching, signal mixing, and voltage regulation.
The working principle of the BAP64-03,115 is based on the PN junction. A PN junction forms a barrier between two types of semiconductor materials, or “p-type” and “n-type”. A PN junction acts as a diode, which allows current to pass through in one direction but not in the other. The PN junction of the BAP64-03,115 is designed to handle high frequencies and is highly efficient for its size.
The BAP64-03,115 is designed to work in a variety of ways. It is capable of handling high power levels and can be used in both linear and switching applications. In linear applications, it can handle frequencies ranging from 0.1 GHz to 3 GHz, with an operating frequency range of up to 18 GHz.
The diode\'s PN junction is also designed to be highly efficient, reducing the power consumed in the rectification process. The diode also features a built-in avalanche breakdown protection, which prevents damage to the device in case of overvoltage conditions. This protection also helps keep the device from degrading its performance over time, further increasing its value.
The BAP64-03,115 is an ideal choice for a wide range of needs. It is robust, efficient, and reliable, offering excellent performance across a wide frequency range. Its built-in protection allows it to be used in a variety of applications with excellent reliability and performance. With its high efficiency, low power consumption, and superior electrical characteristics, the BAP64-03,115 diode is a top choice for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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