Allicdata Part #: | 568-1939-2-ND |
Manufacturer Part#: |
BAP65-05W,115 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 30V 100MA SOT323 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 30V 100mA 240... |
DataSheet: | BAP65-05W,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06237 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.425pF @ 20V, 1MHz |
Resistance @ If, F: | 350 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 240mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BAP65-05 |
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RF diodes are the building blocks of countermeasures, microwave switches, relays, RF converters and other circuits used in modern communication systems. The BAP65-05W,115 is a good example of an RF diode. These diodes are among the most used in the radio-frequency (RF) space. In this article, we will discuss the application fields and working principle of BAP65-05W,115.
Application fields of BAP65-05W,115
BAP65-05W,115 is a popular RF diode due to its fast switching speed, low insertion loss, and low noise level. As such, it can be used in the following application fields:
- Power line frequency control
- HF communication and microwave communication
- FM, AM and television broadcasting
- High-fidelity audio frequency
- Wireless communication systems
- Automotive systems & industrial control systems
Working Principle of BAP65-05W,115
The BAP65-05W,115 is a P-type reverse bias, Schottky barrier diode (RBD). This diode is made of a seminconductor material with a laser-patterned metal contact that forms a small Schottky Barrier between the base material and the metal contact. The Schottky contact, which is also known as doping, shifts the forward bias curve of the diode and deflects excess electrons from the normal current path. This provides for very fast switching speeds with low on voltages and low off-state leakage.
When the diode is forward biased the free charge carriers in the base material increase and cause holes to move through the junction. This forms an inversion layer and allows the current to flow through the junction. The Schottky barrier restricts these carriers, resulting in a faster switching time as compared to regular forward bias diodes. The lower on-voltage and off-state leakage also contribute to greater efficiency.
The reverse bias mode operates in the same manner but with the opposite effect. It works by limiting the number of carriers that can pass through the junction. This is a great way to reduce off-state leakage while still allowing for fast switching times.
BAP65-05W,115 is a great choice for applications that require fast switching speeds, low noise levels, and low insertion loss. Its many applications make it a popular choice for modern communication systems as well as for general-purpose circuits. Its fast switching speed and low noise level make it perfect for power line frequency control, FM broadcasting, and other telecommunications systems.
The specific data is subject to PDF, and the above content is for reference
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