Allicdata Part #: | BAP65-05,215-ND |
Manufacturer Part#: |
BAP65-05,215 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 30V 100MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 30V 100mA 250... |
DataSheet: | BAP65-05,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06237 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.425pF @ 20V, 1MHz |
Resistance @ If, F: | 350 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAP65-05 |
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Diodes play an integral part in many applications and devices. From their basic definition as a device with two terminals that conducts current in one direction and blocks current in the other, they have become an integral part of every day electronics. RF diodes have become especially important in recent years, as wireless systems and communication become more prevalent. BAP65-05,215 is one such diode that operates in the RF spectrum. This article will provide an overview of the application fields of this specialized transmitter and its basic working principles.
Application Fields of BAP65-05,215
The BAP65-05,215 RF diode is designed for a variety of switching, signal detection and high-frequency amplification applications. It is composed a PN junction capacitor in a very small package with a reliable design and wide range of operating conditions. As a result, it is ideal for usage in a variety of RF systems, such as amateur radio systems, cellular phones, broadband networks, optical networks and automotive systems. This diode has a wide bandwidth and high stability, making it suitable for applications where stability is important, such as in GSM and PCS systems. Additionally, the BAP65-05,215 operates with low noise levels and well-suited for low power and mixed signal detection applications.
Working Principle of BAP65-05,215
The BAP65-05,215 RF diode works by taking advantage of a region of opposite charges at the PN junction where current only flows one way. This region is known as a depletion region, and the current\'s conduction is determined by voltage levels applied to the diode. If the voltage is too low, current will not pass. As the voltage applied to the diode increases, more current can pass through until it reaches a certain limit, known as the breakdown voltage, and then current stops flowing. The BAP65-05,215 specifically has a reverse voltage breakdown of 6V, one of the lowest available. In addition to this, the diode features a capacitance of 1.5pF, a forward voltage drop of 0.7V, a reverse leakage current of 50nA and a maximum operating temperature of +105°C, all of which contribute to its effectiveness in a variety of applications.
Conclusion
The BAP65-05,215 RF diode is an excellent device for a number of applications, from low-power circuits to high-speed digital switching and more. It features a PN junction capacitor in a reliable package and offers a wide range of operating conditions, making it highly versatile. The diode is perfect for usage in RF systems and is compatible with a variety of devices, including amateur radio systems, cellular phones and optical networks. Its low noise and wide bandwidth also make it ideal for applications where stability is important. All in all, the BAP65-05,215 RF diode is an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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