BAS20 Discrete Semiconductor Products |
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| Allicdata Part #: | BAS20FSTR-ND |
| Manufacturer Part#: |
BAS20 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GP 200V 200MA SOT23-3 |
| More Detail: | Diode Standard 200V 200mA Surface Mount SOT-23-3 (... |
| DataSheet: | BAS20 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 200mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
| Speed: | Small Signal = |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 100nA @ 50V |
| Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | BAS20 |
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The BAS20 is a single rectifier diode that is designed for general purpose voltage rectifying applications. It is a three-pin fast-recovery rectifier, which has an anode, a cathode, and a resistor terminal. It is available in a variety of sizes, from ultra-small surface mount packages to larger discrete component cases. The fast-recovery rectifier diode type is used primarily to provide rectified AC power to other circuits, such as amplifiers and oscillators.
The working principle of the BAS20 is based on an intrinsic property of semiconductors, known as the p-n junction. The p-n junction is the junction between a p-type semiconductor and an n-type semiconductor. When a voltage is applied across the p-n junction, a depletion region will form, which serves as a barrier to current flow. In a diode, this barrier is used to control the flow of current through the device. When the voltage is of a certain polarity, the barrier will allow current to flow through the diode, in a process known as forward-biasing. When the voltage is of the opposite polarity, the diode will resist current flow and will be said to be reverse-biased.
In the case of the BAS20, the anode is connected to the p-type layer and the cathode to the n-type layer. When a forward-bias voltage is applied to the diode, current will flow through the components connected to the anode and the cathode, allowing power to be supplied to the connected loads. When reverse-biased, the diode will act as an open circuit, interrupting the current flow. The fast-recovery characteristic of the BAS20 means that the diode is able to switch from forward-bias to reverse-bias quickly and with little power loss.
The BAS20 diode is an ideal choice of component for general-purpose power rectification applications due to its fast-recovery feature. It is used in a variety of circuits, from power supplies to audio amplifiers, and its small size and low forward voltage make it suitable for applications such as cell phone chargers and automotive audio systems. It is also popular as a DC-DC switching converter due to its fast switching speed and low power loss.
The BAS20 is also suitable for applications in which the isolation of consumer electronics from the power supply is critical. This isolation prevents noise from the power supply entering the consumer electronics, resulting in better performance and greater reliability. The BAS20 is often used in consumer electronics power supplies to provide galvanic isolation between the input and output circuits.
In summary, the BAS20 is a fast-recovery single-phase diode, suitable for general purpose rectification purposes. Its small size and high-quality construction make it a great choice for applications such as power supplies, DC-DC converters, and consumer electronics power supplies, providing excellent noise isolation and efficiency.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BAS28E6327HTSA1 | Infineon Tec... | 0.05 $ | 3000 | DIODE ARRAY GP 80V 200MA ... |
| BAS21PGX | Nexperia USA... | 0.05 $ | 1000 | DIODE SW 250V 125MA SOT35... |
| BAS21W-7-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 200MA... |
| BAS21WS-TP | Micro Commer... | 0.03 $ | 6000 | DIODE GEN PURP 250V 200MA... |
| BAS21SW,115 | Nexperia USA... | 0.2 $ | 21383 | DIODE ARRAY GP 250V 225MA... |
| BAS21/8VL | Nexperia USA... | 0.01 $ | 1000 | DIODE GP 250V 200MA TO236... |
| BAS21J,115 | Nexperia USA... | 0.06 $ | 36000 | DIODE GEN PURP 300V 250MA... |
| BAS282-GS18 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 50V 30MA S... |
| BAS28WE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE ARRAY GP 80V 200MA ... |
| BAS21E6327HTSA1 | Infineon Tec... | 0.03 $ | 1000 | DIODE GEN PURP 200V 250MA... |
| BAS20-E3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS20W-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21AW,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 250V 225MA... |
| BAS20DW-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 150V 200MA... |
| BAS21W-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21-HE3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21HT1G | ON Semicondu... | -- | 81 | DIODE GEN PURP 250V 200MA... |
| BAS21GWJ | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
| BAS20-G3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS20W-7-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 150V 200MA... |
| BAS21GWX | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
| BAS21LLYL | Nexperia USA... | 0.02 $ | 1000 | BAS21LL/SOD882/SOD2Diode ... |
| BAS286-GS08 | Vishay Semic... | 0.05 $ | 1000 | DIODE SCHOTTKY 50V 200MA ... |
| BAS282-GS08 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 50V 30MA S... |
| BAS20-G3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21TA | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS29,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE AVALANCHE 90V 250MA... |
| BAS20-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21DWAQ-7 | Diodes Incor... | 0.06 $ | 1000 | DIODE SW DL 2500V 100MA S... |
| BAS21C RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
| BAS21 RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
| BAS21S-TP | Micro Commer... | 0.03 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
| BAS21W,115 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 250V 225MA... |
| BAS21UE6327HTSA1 | Infineon Tec... | -- | 1000 | DIODE ARRAY GP 200V 250MA... |
| BAS21JF | Nexperia USA... | 0.04 $ | 1000 | DIODE GEN PURP 300V 250MA... |
| BAS21LT1G | ON Semicondu... | -- | 60000 | DIODE GEN PURP 250V 200MA... |
| BAS21T-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21_D87Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 250V 200MA... |
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BAS20 Datasheet/PDF