BAS21S-TP Allicdata Electronics

BAS21S-TP Discrete Semiconductor Products

Allicdata Part #:

BAS21STPMSTR-ND

Manufacturer Part#:

BAS21S-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ARRAY GP 250V 200MA SOT23
More Detail: Diode Array 1 Pair Series Connection Standard 250V...
DataSheet: BAS21S-TP datasheetBAS21S-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02739
6000 +: $ 0.02381
15000 +: $ 0.02024
30000 +: $ 0.01905
75000 +: $ 0.01786
150000 +: $ 0.01588
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: BAS21S
Description

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Diodes play a critical role in many electrical engineering fields, and in recent years a new generation of semiconductor components has emerged, namely “BAS21S-TP”. The application of these diodes, as well as their working principle, provides engineers with a powerful weapon to overcome a variety of technological challenges.

BAS21S-TP is a silicon-controlled rectifier or SCR based diodes. They can be used for a variety of purposes, including phase control, over-voltage protection, and power switching. The most common application is to provide over-voltage protection by limiting the voltage supplied to a load to a desired level. The BAS21S-TP can also be used to switch low-power signals as well as providing isolation between input and output.

The working principle of these diodes is based on the fact that they are made of a single wafer of silicon with two parallel plates, one anode and one cathode. When a voltage is applied to the diode, despite the positive and negative charges, a small voltage is created between the plates. This voltage is sufficient to turn on the SCR, switching the diode\'s conduction state. By varying the voltage, the current in the circuit can be regulated. It is also possible to switch the direction of the current using a single BAS21S-TP diode.

Apart from over-voltage protection, BAS21S-TP diodes can be applied for a variety of other purposes. For example, they can be used for controlling voltage and current in high-powered applications, as well as for generating accurate voltage and frequency signals in low-power applications. BAS21S-TP diode arrays can be used for controlling the amount of current that can flow between two points, and they can provide isolation protection in high-powered applications.

One of the main advantages of BAS21S-TP diodes is their impressive power dissipation ratings. They are capable of dissipating up to 900 Watts of power, and can tolerate extreme temperatures up to 175°C. This ensures high reliability and robust operation. In addition, BAS21S-TP diodes have a low forward voltage drop, which improves efficiency. They have a superior surge withstand capability, and have a wide variety of die packages, including SOT23-6 and to-220.

In conclusion, BAS21S-TP diodes are an ideal solution for a variety of electrical engineering applications. They provide protection against over-voltage, and can be used to switch current, as well as for isolation and control of current and voltage. They also offer excellent power dissipation and temperature tolerances, and a wide variety of die packages.

The specific data is subject to PDF, and the above content is for reference

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