BAS285-GS18 Allicdata Electronics
Allicdata Part #:

BAS285-GS18GITR-ND

Manufacturer Part#:

BAS285-GS18

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 200MA SOD80
More Detail: Diode Schottky 30V 200mA Surface Mount SOD-80 Quad...
DataSheet: BAS285-GS18 datasheetBAS285-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03175
30000 +: $ 0.02977
50000 +: $ 0.02646
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 2.3µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Description

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Introduction

The BAS285-GS18 is a single rectifier diode designed for application in many different fields. This diode is capable of withstanding higher currents and is typically used for switching and rectification circuits. It is a fantastic choice for any application that requires fast switching and reliable rectification.

Application Fields

The BAS285-GS18 diode is commonly used in a variety of applications, such as:

  • Power supplies
  • DC/AC conversion
  • DC/DC selective rectification
  • High current fast switching
  • High frequency rectification
  • Electron tube circuit
  • Lighting
  • Motor control

Working Principle

The BAS285-GS18 diode is a single-phase, full-wave rectifier. This diode works by passing electricity in one direction only, blocking it from flowing in the other direction. This helps to convert AC to DC. It is considered a high-efficiency rectifier since it does not require additional rectification circuits.

The principle behind this process is based on the PN junction formed by the N-type and the P-type semiconductor materials. This PN junction created a barrier at the junction which affects the way electricity flows through the diode. For instance, when a positive voltage is applied at the anode (+), the diode becomes forward-biased, and electrons flow freely from the N-type material to the P-type material. The electrons fill the holes in the P-type material, creating a large current. On the other hand, when a negative voltage is applied at the anode (-), this junction becomes reverse-biased, and no current passes through the diode.

Diode Details

The BAS285-GS18 diode is an epitaxial planar PN junction diode encased in an DO-41 package. It features a forward voltage drop of about 1V, a maximum reverse current of about 0.5uA, and a maximum reverse voltage of about 25V. It also has a current capacity of up to 1A.

Conclusion

The BAS285-GS18 diode is an efficient and reliable choice for a variety of applications. It is capable of fast switching and efficient rectification, making it a versatile choice for those looking for a reliable semiconductor solution. With its rugged construction and high current capacity, it is the perfect choice for any circuit that requires fast and reliable switching.

The specific data is subject to PDF, and the above content is for reference

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