BAT1502LRHE6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BAT1502LRHE6327XTSA1TR-ND |
Manufacturer Part#: |
BAT1502LRHE6327XTSA1 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 4V 110MA TSLP-2 |
More Detail: | RF Diode Schottky - Single 4V 110mA 100mW PG-TSLP-... |
DataSheet: | BAT1502LRHE6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.22200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 110mA |
Capacitance @ Vr, F: | 0.35pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 100mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | PG-TSLP-2 |
Base Part Number: | BAT15 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - RF:
The BAT1502LRHE6327XTSA1 diode is a versatile device that grants exceptional performance in a wide range of applications. This diode is frequently used in RF (Radio Frequency) applications and is a popular choice for telecommunication and digital signal processing devices. The diode’s construction aids performance, allowing it to operate with greater efficiency.
The BAT1502LRHE6327XTSA1 is a small-signal diode with a relatively low forward voltage drop, making it an ideal choice for applications including signal detection and power amplification. The high current efficiency provided by this diode is noteworthy, as it reduces power losses and leads to longer device lifespans.
The diode also provides durable operation through its specification of a maximum average forward current of 10 mA. This high current efficiency allows the diode to maintain performance in the long-term, providing greater value-for-money. In addition, by producing low levels of thermal noise, this diode can be used in high frequency applications with performance kept steadier.
The distinguishing feature of the BAT1502LRHE6327XTSA1 is its ability to react swiftly to abrupt changes in current. This fast response time, which is made possible by the rectification mechanism, is beneficial in digital communications and other applications which require speed. In addition, the diode’s fast switching capability makes it useful for both analogue and digital signal processing.
This diode’s construction also permits the passage of inversely polarized electrons, making it a suitable component in switch-mode power supplies or other applications that require rapid current reversal. The presence of a reverse-biased junction also allows higher levels of voltage to be supported.
The key component of the BAT1502LRHE6327XTSA1 is its p-type and n-type semiconductors, which form a junction between them. When current flows through the diode, each of these semiconductors acts as a barrier to any reverse current that may be present. By carrying out this \'rectification\' process, the diode allows for the more efficient conversion of AC to DC power.
Highly-durable components such as these are essential to the success of manufacturing operations and the BAT1502LRHE6327XTSA1 certainly fits the bill. It provides numerous benefits to the consumer, including extended operational lifespans and high current efficiency. Furthermore, this diode’s fast switching capability is particularly well suited to digital communications and signal processing, two particularly important applications in today’s world.
The specific data is subject to PDF, and the above content is for reference
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