BAT18,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1943-2-ND |
Manufacturer Part#: |
BAT18,215 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE 35V 100MA SOT-23 |
More Detail: | RF Diode Standard - Single 35V 100mA TO-236AB (SO... |
DataSheet: | BAT18,215 Datasheet/PDF |
Quantity: | 21000 |
3000 +: | $ 0.08576 |
6000 +: | $ 0.08056 |
15000 +: | $ 0.07537 |
30000 +: | $ 0.06913 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1pF @ 20V, 1MHz |
Resistance @ If, F: | 700 mOhm @ 5mA, 200MHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAT18 |
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RF Diodes have many different applications, including high power amplifiers, detectors, switches and mixers. One of the most commonly used diodes is the BAT18,215, which is used in mixers and amplifiers. This article will discuss the application field and working principle of the BAT18,215.
The BAT18,215 is a high power, low-loss RF diode which is primarily used as an amplifier, mixer or oscillator. It is a low power amplifier, designed to provide a wide range of operating frequencies, from around 10 MHz to around 1 GHz. The BAT18,215 is also capable of providing a high gain, up to about 20 dB at its higher levels of operation.
The BAT18,215 is a high-end RF diode, and as such is highly tolerant of high frequency signals. This means that it is well suited to use in high power amplifiers, which require high power levels, high frequency operation, and immunity to the effects of spurious signals. The BAT18,215 is also well suited to use in receiver front ends, where high input impedance is required, and where the wide bandwidth of the diode is beneficial.
The BAT18,215 is capable of providing high power output, as well as excellent linearity, even at its highest power levels. This makes it an ideal mixer, allowing high power signals to be mixed, while avoiding distortion and interference. The high current capability of the BAT18,215 also provides a low-loss solution for use in high power amplifiers and switches, where the diode can provide a good level of control over current distribution.
The working principle of the BAT18,215 is based on the principle of rectification, which is the process of converting an alternating current into direct current. The diode is constructed from a semiconductor material, and is designed to act as a barrier between two electrodes. When a current is applied between the two electrodes, the diode will allow current to pass in one direction, and block current in the opposite direction. This allows it to be used as an amplifier (to amplify a signal) or a mixer (to mix two signals). It is also used in oscillators, which create a repeating current.
In summary, the BAT18,215 is a high-end RF diode which is capable of providing high power, low-loss operation. It is well suited to use in mixers, amplifiers, and oscillators, and can provide excellent linearity even at high power levels. Its high current capability also makes it suitable for use in high power amplifiers, switches, and receivers. The working principle of the BAT18,215 is based on rectification, and it can be used to convert an alternating current into a direct current.
The specific data is subject to PDF, and the above content is for reference
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