Allicdata Part #: | BAT15099RE6327HTSA1TR-ND |
Manufacturer Part#: |
BAT15099RE6327HTSA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 4V 110MA SOT-143 |
More Detail: | RF Diode Schottky - 1 Bridge 4V 110mA 100mW PG-SOT... |
DataSheet: | BAT15099RE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19740 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 110mA |
Capacitance @ Vr, F: | 0.5pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 100mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The field of application and working principle of the BAT15099RE6327HTSA1 is an important factor in all applications involving RF diodes. A RF diode is a two-terminal solid-state semiconductor device that restricts the flow of current in one direction while allowing current to pass in the other direction. These diodes are used in a wide range of applications, such as phase modulation and amplitude modulation, as well as many other signal processing applications. The BAT15099RE6327HTSA1 is a RF diode, specifically designed for RF applications.
The BAT15099RE6327HTSA1 is a cascode high-bandwidth (up to 10GHz) RF diode that is capable of providing extremely high switching rates due to its wide technology range. This device has an ultra-low capacitance, low-distortion, and low-noise characteristics, which is ideal for use in many applications. This diode is also designed to integrates with other RF components, for a more optimized system design.
The working principle of the BAT15099RE6327HTSA1 is as follows: The diode contains two electrodes; one is the anode and other is the cathode. When current is applied to the anode, the electrons from the anode are attracted to the cathode, thus creating an electric field and movement of electricity. This electric field is used to control the current flow through the diode, thus allowing current to pass in one direction while preventing it from passing in the other.
The BAT15099RE6327HTSA1 is ideally suited for applications where high performance is paramount. It is highly durable and has an ultra-low capacitance and low-distortion characteristic. This diode is ideal for use in both linear and non-linear signal processing applications, such as amplitude modulation, phase modulation, and frequency modulation. Additionally, the device is easy to implement and integrate into other RF components, resulting in an optimized system design. Its high switching rates and high-bandwidth capabilities make it suitable for a wide range of frequencies.
In conclusion, the BAT15099RE6327HTSA1 is a high-performance RF diode designed specifically for RF applications. This device is designed for integration with other RF components, resulting in an optimized system design. Its ultra-low capacitance, low-distortion, and low-noise characteristics make it ideal for use in a variety of signal processing applications. Additionally, the diode is highly durable and capable of providing high switching rates, allowing for use in a wide variety of frequencies. For all these reasons, the BAT15099RE6327HTSA1 is an excellent choice for RF applications.
The specific data is subject to PDF, and the above content is for reference
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