BAT1706WH6327XTSA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BAT1706WH6327XTSA1TR-ND |
| Manufacturer Part#: |
BAT1706WH6327XTSA1 |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | DIODE SCHOTTKY 4V 130MA SOT323 |
| More Detail: | RF Diode Schottky - 1 Pair Common Anode 4V 130mA 1... |
| DataSheet: | BAT1706WH6327XTSA1 Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.08841 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Schottky - 1 Pair Common Anode |
| Voltage - Peak Reverse (Max): | 4V |
| Current - Max: | 130mA |
| Capacitance @ Vr, F: | 0.75pF @ 0V, 1MHz |
| Resistance @ If, F: | 15 Ohm @ 5mA, 10kHz |
| Power Dissipation (Max): | 150mW |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | PG-SOT323-3 |
| Base Part Number: | BAT17-06 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The BAT1706WH6327XTSA1 is a RF diode specifically designed for RF applications. It is a brilliant combination of high performance and superior engineering. This diode boasts a maximum operating temperature of up to 125 degrees Celsius, while its surface mount technology provides increased pressure and surface contact, resulting in better reliability and performance compared to traditional soldered components.
TheBAT1706WH6327XTSA1 diode is a PIN diode, which stands for a Positive Intrinsic Negative diode. These diodes have a thin film of highly doped, semiconductor material on the top of the pin. Along the edges of this material, a lead frame is placed to connect the PIN for electrical current conduction. The structure of this structure is such that current flows in only one direction through the diode.
The working principle behind this diode is based around the fact that the PIN is subjected to an electric field, which produces a variable amount of voltage in the doped semiconductor material. This voltage, in turn, controls the current flowing through the diode, allowing it to pass or block the electric field. The directionality of this diodes is determined by the type of electric field applied on the other side of the diode.
The BAT1706WH6327XTSA1 can be used in a range of RF applications, mainly those related to transmission and reception. These include radio frequency identification systems (RFID), RF amplifiers, cellular base stations, and satellite communications. This diode can also be used in medical imaging, where it helps produce detailed images of the bodies using bursts of high-frequency radio waves.
The BAT1706WH6327XTSA1 diode is an invaluable component for any engineer or designer looking to maximize the efficiency of their RF applications. This diode is highly reliable, making it suitable for the most demanding RF applications, and it has a wide range of features that make it suitable for a variety of applications. Combined with its durability, this diode will ensure it retains its value and performance, even when used under extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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BAT1706WH6327XTSA1 Datasheet/PDF