BAT17E6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BAT17E6327HTSA1TR-ND |
Manufacturer Part#: |
BAT17E6327HTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 4V 130MA SOT-23 |
More Detail: | RF Diode Schottky - Single 4V 130mA 150mW SOT-23-3 |
DataSheet: | BAT17E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03347 |
6000 +: | $ 0.02911 |
15000 +: | $ 0.02474 |
30000 +: | $ 0.02328 |
75000 +: | $ 0.02183 |
150000 +: | $ 0.01892 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 130mA |
Capacitance @ Vr, F: | 0.75pF @ 0V, 1MHz |
Resistance @ If, F: | 15 Ohm @ 5mA, 10kHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAT17 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF diodes are commonly used in a wide range of devices, from wireless routers to radios and televisions. The BAT17E6327HTSA1 RF diode is a good example of this. It is a type of semiconductor component that uses a junction between p-type and n-type materials to control current flow.
The Bat17E6327HTSA1 has a variety of application fields, including RF front ends, RF switch matrices, receivers, transmitters, frequency conversion and band-pass filters. It can also be used in radio frequency detectors and voltage frequency converters. Its main function is to provide a frequency dependent switching capability.
The working principle of the BAT17E6327HTSA1 is relatively simple. The diode is made up of two region, one p-type and one n-type, which are separated by an insulator. The junction is held at a positive potential at one end and a negative potential at the other end. When a voltage of sufficient magnitude is applied to the junction, electrons in the p-type material move towards the n-type material and, conversely, electrons from the n-type material move towards the p-type material.
At the instant when a voltage is applied, a small current flows across the junction and this initial current builds up until a steady state is reached. This steady state current is limited by the properties of the diode and is proportional to the voltage applied. Any changes in the applied voltage will result in a corresponding change in the current flowing through the diode.
The BAT17E6327HTSA1 also comes with a characteristic voltage, which represents the voltage that has to applied in order to achieve a conduction current of a certain magnitude. This characteristic voltage can range from 6 to 7 volts, depending on the temperature of the diode. When the diode has a high voltage, it can handle higher power levels, while lower voltage diodes are more suitable for low power applications. The diode also has a breakdown voltage and a reverse current that can be measured either in amperes or milliamperes.
In addition to the typical RF applications, the BAT17E6327HTSA1 is also suitable for commercial applications, such as power supplies and charging circuits. The controlled current and breakdown voltage of this RF diode make it an ideal choice for these applications as they allow a certain amount of flexibility when it comes to determining the voltage and current required for a particular application.
The BAT17E6327HTSA1 RF diode is a versatile device with a wide range of applications in both RF and commercial devices. Its ability to control current flow, its characteristic voltage, breakdown voltage and reverse current make it an ideal choice for any application requiring a reliable and efficient switch.
The specific data is subject to PDF, and the above content is for reference
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