Allicdata Part #: | BAT1705WE6327HTSA1TR-ND |
Manufacturer Part#: |
BAT1705WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY RF CC SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V 130mA... |
DataSheet: | BAT1705WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 130mA |
Capacitance @ Vr, F: | 0.75pF @ 0V, 1MHz |
Resistance @ If, F: | 15 Ohm @ 5mA, 10kHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAT17-05 |
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The BAT1705WE6327HTSA1 is a diode designed specifically for operation at frequencies in the radio frequency (RF) range. It is designed to provide high-power operation and does so by minimizing reactive components and minimizing the capacitance associated with diodes, which can cause frequency shifts in radio waves.
Its application mainly relates to RF switching, RF attenuation and RF protection, since it exhibits low parasitics and broad bandwidth that helps reduce signal distortion. This diode is suitable in applications such as RF microwave, broadband and high frequency receivers, transmitters, amplifiers, filters, and oscillators.
A distinct feature of the BAT1705WE6327HTSA1 is its ability to act as an efficient and reliable source of negative resistance, which increases the performance of RF circuitry. It is also commonly used in RF amplifiers, where its non-linear resistance is exploited to give a gain-control signal that can modify the gain of an amplifier or attenuator.
Working Principle: The BAT1705WE6327HTSA1 works by modifying its resistancedepending on the current. It is a three-terminal device composed of the anode, cathode, and gate. As current passes through the anode, it causes a charge to build up in the gate, which increases the voltage across the gate and causes the resistance between the anode and cathode to decrease. Conversely, decreasing the current causes the voltage across the gate to drop, thereby increasing the resistance between the anode and cathode.
In this way, the BAT1705WE6327HTSA1 is able to act as an efficient and reliable source of negative resistance, which can be used to increase the performance of RF circuitry. The device is also used in frequency-dependent load applications, where the non-linear resistance of the device is exploited to give a gain-control signal that can modify the gain of an amplifier or attenuator.
The BAT1705WE6327HTSA1 is a robust device that can operate over a wide temperature range and can handle high power while maintaining its negative resistance characteristics. It is also well-suited to high frequency applications, due to its low capacity and low reverse recovery time, which are important factors in RF applications.
Overall, the BAT1705WE6327HTSA1 is an efficient and reliable source of negative resistance that can significantly improve the performance of RF circuitry. Its broad bandwidth capabilities help reduce signal distortion, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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