Allicdata Part #: | BAT1505WH6327XTSA1TR-ND |
Manufacturer Part#: |
BAT1505WH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 4V 110MA SOT323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V 110mA... |
DataSheet: | BAT1505WH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 110mA |
Capacitance @ Vr, F: | 0.35pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 100mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
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Diodes - RF: BAT1505WH6327XTSA1 Application Field and Working Principle
The BAT1505WH6327XTSA1 is a high performance, low-loss Schottky barrier diode with a high breakdown voltage of 150 volts. It is suitable for applications such as high frequency switching, clock generation, and high speed power supply control. This diode has an extremely low forward voltage drop, low reverse leakage current and very high switching speed. As a result, it is ideal for use in high frequency circuits and applications where low power consumption and fast switching times are required.
The application field for the BAT1505WH6327XTSA1 is mainly in high frequency switching, clock generation, and power supply control. It is especially useful in clock design, where the high switching speed and low forward voltage drop make it well suited for applications such as oscillators, resonators, and timing circuits. The very low power consumption, combined with the relatively low voltage drop makes it an ideal choice for use in high frequency power supplies, as well as in communication systems that require both low power consumption and high switching speeds.
The working principle of the BAT1505WH6327XTSA1 is based on the Schottky barrier diode\'s unique characteristics. When forward bias is applied to the diode, electrons are pushed through its P-N junction. The barrier potential between the P and N regions thus creates a potential barrier across the diode. As current passes through the barrier, a voltage develops across the diode, forming a diode without a depletion region. This diode\'s characteristics allow it to operate at very fast switching speeds, with very low forward voltage drops and reverse leakage currents.
Also, due to its low leakage current, the BAT1505WH6327XTSA1 is less likely to cause thermal runaway, allowing it to operate reliably in a wide range of voltages. Its design also reduces cross-talk between itself and other components, reducing interference in high frequency applications.
In summary, the BAT1505WH6327XTSA1 is a high performance, low-loss, fast switching Schottky barrier diode for use in high frequency switching, clock generation, and power supply control applications. It has an low forward voltage drop, low leakage current, fast switching speed and is less likely to experience thermal runaway. This makes it ideal for use in clock design, high frequency power supplies, and communication systems.
The specific data is subject to PDF, and the above content is for reference
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