Allicdata Part #: | BAT1705WH6327XTSA1TR-ND |
Manufacturer Part#: |
BAT1705WH6327XTSA1 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 4V 130MA SOT323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V 130mA... |
DataSheet: | BAT1705WH6327XTSA1 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.05656 |
6000 +: | $ 0.05342 |
15000 +: | $ 0.04871 |
30000 +: | $ 0.04556 |
75000 +: | $ 0.04190 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Current - Max: | 130mA |
Capacitance @ Vr, F: | 0.75pF @ 0V, 1MHz |
Resistance @ If, F: | 15 Ohm @ 5mA, 10kHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAT17-05 |
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Diodes - RF
BAT1705WH6327XTSA1 is a diode type in the family of RF Diodes. RF diodes are semiconductor devices that are used to direct the flow of current in AC circuits, and it also acts as rectifiers to convert AC to DC voltage and as switches to open and close circuits.
Application Field
The BAT1705WH6327XTSA1 utilizes a single Schottky barrier diode (SBD) which is designed to detect LO leakage in self-mixers of RF transmitter and receiver applications. This diode can be also used in switch controllers and others because of its low bias voltage and low capacitance.
BAT1705WH6327XTSA1 is especially suitable for portable or handheld devices applications. These applications are battery powered and require high efficiency, low quiescent current, and low cost. The BAT1705WH6327XTSA1 have excellent switching speed, due to the Schottky diode features, which makes it perfect for high-speed applications such as power switches, level shifters and detector circuits.
Working Principle
The working principle of BAT1705WH6327XTSA1 is based on a forming of a Schottky barrier between a metal and a semiconductor. When an anode voltage is applied, a current is allowed to pass through the diode. When a reverse voltage is applied, there is no current flow through the diode.
Due to the inherent characteristics of the Schottky diode, less voltage is required to forward bias the diode compared with standard silicon-based diodes. This low forward voltage is the main advantage of this type of diode compared to the normal diodes and makes it very suitable for mobile applications. Furthermore, due to the low voltage, this diode has low reverse leakage current and low capacitance which enables it to operate in a wide range of frequencies.
BAT1705WH6327XTSA1 also provides a low drive current. This makes the diode suitable for applications which require low power consumption. Low power consumption means that the diode can operate with lower bias LED, thereby reducing radiation in-systems.
In conclusion, the BAT1705WH6327XTSA1 is an ideal choice for applications requiring low bias voltage, low capacitance, low leakage current and low power consumption. This device provides a precise operational timing and accurate switching, making it ideal for portable or handheld devices requiring power consumption efficiency.
The specific data is subject to PDF, and the above content is for reference
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