BAT15099E6327HTSA1 Allicdata Electronics

BAT15099E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BAT15099E6327HTSA1TR-ND

Manufacturer Part#:

BAT15099E6327HTSA1

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE SCHOTTKY 4V 110MA SOT-143
More Detail: RF Diode Schottky - 2 Independent 4V 110mA 100mW P...
DataSheet: BAT15099E6327HTSA1 datasheetBAT15099E6327HTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13350
6000 +: $ 0.12489
15000 +: $ 0.11627
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 4V
Current - Max: 110mA
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: --
Power Dissipation (Max): 100mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4
Base Part Number: BAT15-099
Description

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Diodes - RF

The term RF (short for Radio Frequency) refers to the range of frequencies used for communication between two devices. RF diodes are used in a variety of applications such as radio, television and communications equipment, as well as in the circuitry of many kinds of electronic devices. In these applications they can be used to regulate the flow of electric current or to control the direction of current flow.

One of the most popular types of RF diode is the BAT15099E6327HTSA1. This diode is designed for use in applications such as fast switching, phase-locked loops, class-D amplifiers, wireless communication networks and other applications requiring fast switching and low-noise performance. It is suitable for high-temperature, high-humidity and low-frequency environments. It has a high-power rating of up to 9A and a low forward voltage drop of 0.7V, making it suitable for applications requiring a high level of precision.

The BAT15099E6327HTSA1 diode works by allowing a current to flow only in one direction. It acts as a one-way valve that allows electric current to flow through it one way and blocks it from flowing the other way. This one-way flow is controlled by a built-in PIN junction, which determines how much current can pass through the diode in each direction. Some features of the BAT15099E6327HTSA1 diode include a low forward voltage drop, a low voltage reverse breakdown and a low junction temperature of 150°C.

The PIN junction is the most important and sensitive area of the diode. It is made up of a layer of N-type material on one side and a layer of P-type material on the other. When the PIN junction is reversed biased (negative voltage applied to the N-type side and positive voltage applied to the P-type side), the current flow is blocked. When the PIN junction is forward biased (positive voltage applied to the N-type side and negative voltage applied to the P-type side), the current flows freely. This allows the diode to act as a switch and control the direction of current flow.

The BAT15099E6327HTSA1 is a general purpose RF diode suitable for applications such as radio and television equipment, audio and video equipment, wireless data communication equipment, and many other devices. It is suitable for high-temperature and high-humidity environments and has a low forward voltage drop and low junction temperature for precise current control. Its high-power rating and low voltage reverse breakdown make it suitable for applications requiring efficient energy management.

The specific data is subject to PDF, and the above content is for reference

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