BC 807-16 E6433 Allicdata Electronics
Allicdata Part #:

BC807-16E6433-ND

Manufacturer Part#:

BC 807-16 E6433

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 45V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 45V 500mA 200MHz 330m...
DataSheet: BC 807-16 E6433 datasheetBC 807-16 E6433 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC807
Description

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BC 807-16 E6433, a type of single bipolar transistor, is commonly used for general-purpose amplification or switching applications. It is relatively low-cost and is available in several package configurations.

BC 807-16 E6433 is a NPN transistor composed of two bipolar transistors attached together in an ‘in-line’ type configuration. It is typically sold in TO-92 or SOT-223 packages, and other package styles are available that use the same part number. The ‘E’ stands for exposed base, which indicates that the base pin is available for attaching a wire for better electrical connectivity.

BC 807-16 E6433 is designed to operate at power supply voltage up to 50 to 100 volts (Vce) and a current of up to 500mA, making it ideal for most general-purpose applications. It is not designed for extremely high frequency or power applications, however.

The device has an emitter to base breakdown voltage (VEBO) of 7V, a collector to base breakdown voltage (VCBO) of 30V and a collector to emitter voltage (VCEO) of 30V. The maximum DC collector current (IC) is 500mA. The maximum collector-base voltage (Vcb) is 80V, and the maximum collector-emitter voltage (Vce) is 40V. Transistor gain (hFE) is typically 110.

It is important to ensure that the transistor is not operated outside of its electrical specifications since doing so could damage it. Care is also needed to make sure that operating temperature does not exceed maximum environmental ratings since this could degrade transistor performance and reliability.

The most common application for a BC 807-16 E6433 is to amplify or switch signals. In amplification applications, the transistor acts as a current amplifier and can amplify the current in a signal. The gain of a transistor depends on the biasing conditions set by resistors, which are usually connected to the emitter and base junction. In switching applications, the transistor is used to switch a signal on and off by controlling the current in the base junction. This is usually done with a voltage signal.

In summary, BC 807-16 E6433 is a valid single BiPolar Transistor (BJT) choice for general purpose amplification or switching applications. It should not be used for very high frequency or power applications, and it is important to adhere to the device electrical and environmental specifications for reliable operation.

The specific data is subject to PDF, and the above content is for reference

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