BC858ALT1G Allicdata Electronics
Allicdata Part #:

BC858ALT1GOSTR-ND

Manufacturer Part#:

BC858ALT1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m...
DataSheet: BC858ALT1G datasheetBC858ALT1G Datasheet/PDF
Quantity: 9000
1 +: $ 0.01000
10 +: $ 0.00970
100 +: $ 0.00950
1000 +: $ 0.00930
10000 +: $ 0.00900
Stock 9000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The BC858ALT1G is a PNP Small-Signal Transistor produced by NXP. This component is designed for use as a general-purpose amplifier and switch in various electronic devices. It is categorized in the Transistors - Bipolar (BJT) - Single class of transistors.

This component is primarily composed of an NPN and a PNP substrate. It features a 100V collector-base voltage breakdown and a 45V collector-emitter voltage rating. Maximum collector current is 1A and its power dissipation rating is 625mW. Its maximum switching frequency is 300MHz. Its collector-emitter saturation voltage rating is 0.2V @ 500 mA. The BC858ALT1G is available in a TO18 transistor package.

The BC858ALT1G has several notable thermoelectric features. It features a reverse leakage current of 1uA at 25 Degrees Celsius and a maximum junction temperature of 150 Degrees Celsius. Rated junction capacitance of approximately 30pF, making it well suited for use in antenna switching, current sensing, and other electronics applications that require low parasitic capacitance. It also features a low gate charge of 4.2nC.

The BC858ALT1G is typically used in various consumer and commercial electronics applications. It can be used as a low-frequency amplifier or as a switch in various consumer products such as radios, CD players, and video game consoles. In industrial applications, it can be used as a current sensor or to control power in applications such as motor control and power control circuits.

The BC858ALT1G is an NPN-PNPSmall-Signal Bipolar Transistor that is used for a variety of consumer and industrial electronic applications. It features an NPN substrate and a PNP substrate, with a collector-base voltage breakdown of 100V, a collector-emitter voltage rating of 45V, collector current rating of 1A, power dissipation rating of 625mW, and switching frequency of 300MHz. It is also thermoelectric with approximate junction capacitance of 30pF, reverse leakage current of 1uA at 25 Degrees Celsius, and maximum junction temperature of 150 Degrees Celsius. The BC858ALT1G is typically used as an amplifier or switch in consumer electronics such as radios, CD players, and video game consoles and in industrial applications such as motor control, power control, and current sensing.

The specific data is subject to PDF, and the above content is for reference

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