| Allicdata Part #: | BC846BWT1GOSTR-ND |
| Manufacturer Part#: |
BC846BWT1G |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 65V 0.1A SC-70 |
| More Detail: | Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 150m... |
| DataSheet: | BC846BWT1G Datasheet/PDF |
| Quantity: | 9000 |
| 1 +: | $ 0.00800 |
| 10 +: | $ 0.00776 |
| 100 +: | $ 0.00760 |
| 1000 +: | $ 0.00744 |
| 10000 +: | $ 0.00720 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
| Power - Max: | 150mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SC-70-3 (SOT323) |
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The BC846BWT1G is a type of single bipolar junction transistor (BJT) used in many electronic applications. It is a NPN transistor, which means it can be used to amplify the signal output from a logic circuit. The BC846BWT1G has a maximum current gain of 250, a collector-emitter breakdown voltage of 40V, and a maximum collector-base breakdown voltage of 60V. It also has a base-emitter voltage of 6V and a power dissipation of 842mW. These features make it ideal for a variety of applications.
Application Field of BC846BWT1G
The BC846BWT1G is commonly used in logic circuits, digital switching systems and audio amplifiers. It can also be used in low noise circuits where a high collector-emitter breakdown voltage is required. Additionally, this transistor can be used in circuits that require fast switching speeds and high current levels. The BC846BWT1G is a popular device for pre-amplifiers, oscillators, and amplifier circuits.
Working Principle of BC846BWT1G
The BC846BWT1G is an NPN transistor, which means it is made up of three terminals. The main two terminals are the collector and the emitter, while the third is the base. The base terminal is used to control the flow of the current between the collector and the emitter. When a small amount of current is applied to the base terminal, it controls the amount of current that flows through the transistor. This current flow then controls the current output between the collector and the emitter.
The BC846BWT1G has a current gain of 250, which means that it can amplify the signal output from a logic circuit. This transistor also has a high collector-emitter breakdown voltage and a high power dissipation, which allows it to be used in circuits that require fast switching speeds and high current levels. Additionally, the BC846BWT1G has the ability to reduce electrical noise in analog circuits, making it an excellent choice for pre-amplifiers, oscillators, and amplifier circuits.
The BC846BWT1G is a popular device and can be used in a variety of applications. It is a small, cost-effective transistor with a high current gain, collector-emitter breakdown voltage, and power dissipation. This makes it suitable for low noise circuits, digital switching systems, and audio amplifiers. Additionally, its fast switching speeds and high current levels are beneficial for many applications.
The specific data is subject to PDF, and the above content is for reference
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BC846BWT1G Datasheet/PDF