BC858BLT3G Allicdata Electronics
Allicdata Part #:

BC858BLT3GOSTR-ND

Manufacturer Part#:

BC858BLT3G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m...
DataSheet: BC858BLT3G datasheetBC858BLT3G Datasheet/PDF
Quantity: 20000
10000 +: $ 0.01019
30000 +: $ 0.00917
50000 +: $ 0.00815
100000 +: $ 0.00764
250000 +: $ 0.00679
Stock 20000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The BC858BLT3G transistor is a bipolar type of single transistor specifically designed for use in consumer and automotive applications. The transistor has a maximum power rating of 500 mW and a wide operating temperature range of -65°C to 150°C. It is also capable of high-speed switching operations, making it an ideal choice for applications such as switch mode power supplies, motor control, and other high frequency analog circuits.

This single transistor is part of the BC858 series from NXP Semiconductors, and is manufactured using an industry-standard high-voltage process in a hermetically sealed SC70 package with an R lead plastic encapsulation and mounted on tape and reel. This ensures that the device is robust and reliable, even when operating in extreme environmental conditions. The BC858BLT3G also features a low voltage drop and a maximum junction temperature of +150°C.

The transistor is a NPN will technology component. This means that it will draw current from the collector to the emitter when a voltage is applied from the base to the emitter, creating a small pulse of current. This feature makes the transistor ideal for high-frequency switching operations such as in motor control applications. The transistor is also capable of withstanding high collector-to-emitter voltages, making it suitable for automotive applications. The DC current gain of the BC858BLT3G transistor can be varied by changing the base current, allowing for the adjustment of the output characteristics. The transistor is also protected against electrostatic discharge, making it suitable for use in circuit designs that are sensitive to ESD.

In conclusion, the BC858BLT3G transistor is an ideal choice for applications that require high-speed switching operations, such as switch mode power supplies, motor control circuits, and other high frequency analog applications. Its low voltage drop and high junction temperature make it suitable for use in automotive applications and its hermetically sealed SC70 package ensures that it will perform reliably in extreme environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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