BC847BFA-7B

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	435mW
Frequency - Transition:	170MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XFDFN

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Introduction

BC847BFA-7B is a bipolar NPN transistor typically used in high-speed switching applications. This device has a low max saturation voltage, a low reverse leakage current, and a very low turn-on time making it suitable for applications where minimum power loss and fast switching are important. In this article, we will discuss the application field of BC847BFA-7B, as well as briefly explain its working principle.

Application Field

The BC847BFA-7B is typically used for switching operations in high-frequency circuit designs, especially in automotive and industrial applications. It is suitable for applications such as DC-DC converters, MOSFET/IGBT gate drivers, power supply controllers, power relays, relay drivers, linear regulators, switching amplifiers, and logic gates. Additionally, its low on-resistance and low saturation voltage make it suitable for load switching on AC-DC converters and other applications where low power losses are required.

Working Principle

A BC847BFA-7B is constructed of three layers of semiconductor material, forming a PNPN structure. The layers include an Emitter, Base and Collector, allowing it to switch between a high-resistance (off) and low-resistance (on) state. When a current is applied to the base of the BC847BFA-7B, it creates a forward bias, which brings the base and emitter regions of the transistor into the same voltage state. This forms a closed circuit between the Base and the Collector, allowing current to flow from the Collector to Emitter. The current from the base to the collector can be controlled by controlling the base current since a higher base current causes a higher collector current.The Base-Collector junction creates a reverse bias when the current is removed from the base. This results in an open circuit between the base and collector, and the transistor is now in its off state. In this state, the resistance between the collector and emitter increases significantly, and no current can pass between them.

Conclusion

BC847BFA-7B is a bipolar NPN transistor that is suitable for high-frequency switching applications such as DC-DC converters, MOSFET/IGBT gate drivers, power relays and linear regulators. It has a low max saturation voltage, a low reverse leakage current, and a very low turn-on time making it perfect for applications where minimum power loss and fast switching are important. The BC847BFA-7B is also constructed with three layers of semiconductor material, allowing it to switch between a high-resistance (off) and low-resistance (on) state based on the amount of current applied to the base.

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