BC847A/SNR Allicdata Electronics
Allicdata Part #:

BC847A/SNR-ND

Manufacturer Part#:

BC847A/SNR

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 45V 100MA SOT23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250m...
DataSheet: BC847A/SNR datasheetBC847A/SNR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01633
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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A BC847A/SNR is a small-signal, PNP, general purpose silicon crystal transistor with an advanced and high-frequency design for low saturation voltage, high gain, and high breakdown voltage. It operates in a wide range of frequencies and is suitable for a variety of applications. The PNP description of this transistor means that it has the opposite type of behavior compared to an NPN transistor.

The BC847A/SNR is a common type of transistor which is used in a variety of electronic devices. It is commonly used in applications where high frequency signal amplification is required, such as radio frequency interfaces, RF amplifier stages, cellular networks, and other digital and analog circuits. The transistor is also useful in providing power gain in wideband amplifiers and voltage regulators.

The main characteristic feature of this type of transistor is its frequency response, which is fast enough to handle high frequency signal signals without distorting the signal. The BC847A/SNR has a frequency response of up to 1 GHz and is suitable for high speed applications. It has a very low power dissipation, and its breakdown voltage is high enough to be used in a variety of voltage regulators.

The design of the BC847A/SNR is based on a double base construction. This means that it has two bases for the BJT transistors (Base Emitter and Base Collector), with one of them (Base Emitter) being used to provide the primary current for the transistor and the other (Base Collector) being used to provide the secondary current. This design helps to reduce the collector-emitter capacitance, thus improving the frequency response, and increasing the power gain of the device.

The working principle of the BC847A/SNR is simple. When a small signal is applied to the Collector of the circuit, it is converted into a large signal by the action of the BJT transistor. This action of the transistor is known as amplification. This signal is then passed on to the Base of the transistor, which in turn passes it to the Emitter. The process of amplification increases the signal power and adds gain to the circuit.

In addition to the amplification process, the BC847A/SNR transistor also provides the necessary power gain that is needed for efficient operation. This is accomplished by setting the base bias voltage and current, which are used for the BJT transistors to operate in the linear range. The power gain of the BC847A/SNR is greater when the base bias voltage is set correctly.

Overall, the BC847A/SNR transistor is a very useful device for various types of applications. It is easy to use, has a low saturation voltage, and provides high gain and high breakdown voltage. It is also suitable for high frequency applications, providing the necessary power gain for efficient operation. It is suitable for use in a variety of electronic devices, including RF amplifiers, cellular networks, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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