
Allicdata Part #: | BC848CLT1GOSTR-ND |
Manufacturer Part#: |
BC848CLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.1A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300m... |
DataSheet: | ![]() |
Quantity: | 27000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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BC848CLT1G Application Field and Working Principle
BC848CLT1G is a type of bipolar transistor (BJT) that is used in a variety of electronic applications. It is classified as an NPN transistor, meaning it is used to amplify or switch electrical signals. In this article, we will explore the application fields for the BC848CLT1G and explain its basic working principle.
Application Fields
The BC848CLT1G is a TO-236 package designed for surface mounting. Its main application field is in general-purpose switching and amplifier transistors. They are also used in circuits that require low current-gain cut-off frequency (fT), such as audio amplifiers, local oscillators, and bias circuits. The low frequency roll-off allows for high linearity when paired with capacitive loading. The BC848CLT1G is also used in radio transmitters, transceivers, and other high-frequency applications that require switching and amplifying capabilities.
Working Principle
The BC848CLT1G is a type of NPN transistor. It has three main parts: the base, collector and emitter. An incoming signal current passes through the base and is collected to the collector after being amplified by the transistor. The emitter is connected to a source of electrons, typically a battery, that are responsible for the amplification. As the current flowing through the base is increased, the transistor conducts more current from the collector to the emitter, thus providing a large current gain.
The amplification of the BC848CLT1G transistor relies on the saturation of the base-collector junction. As the base current is increased, the collector current increases proportionally. It is important to note, however, that the transistor cannot work efficiently if the base-collector junction is not saturated. Therefore, it is important to keep the base current at a level necessary for adequate current gain.
The BC848CLT1G also has a reverse biased structure, which means that when a small voltage from the base to the emitter is applied, the transistor cuts off and the current flow is impeded. This feature allows the BC848CLT1G to be used as a switch, controlling current flow in a circuit.
In the application field of radio transmitters, the BC848CLT1G is used in amplifying and switching circuits. Its saturation voltage allows for a high linearity and its switching capability enables it to act like a switch to control the signal flow. Moreover, its low frequency roll-off allows for an effective low frequency signal transmission.
In conclusion, the BC848CLT1G is a highly versatile transistor that is used in a variety of electronic applications. Its application fields include switching and amplifying circuits, radio transmitters, and transceivers, among others. Its working principle relies on the saturation of the base-collector junction and the reverse biased structure to control the current flow in a circuit.
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