Allicdata Part #: | BC846BM3T5GOSTR-ND |
Manufacturer Part#: |
BC846BM3T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 65V 0.1A SOT-723 |
More Detail: | Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 265m... |
DataSheet: | BC846BM3T5G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 265mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | BC846 |
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The BC846BM3T5G is a type of bipolar junction transistor (BJT). It is a single-ended piece of semiconductor material, containing three layers of alternating p- and n-type material that act as the conducting channels between source and drain. BJTs are the active components on most of the integrated circuits (ICs) used in modern electronics. Their main purpose is to amplify electric signals, allowing the signals to pass through a device or electronic circuit without any losses. In addition to their role as a signal amplifier, BJTs are also used to switch circuits, providing an integral connection/disconnection between a circuit’s components.
The BC846BM3T5G is a general-purpose single-bipolar transistor, designed for a variety of applications, including industrial and automotive. Its main features include a very low collector-base breakdown voltage (Vce(sat)), high collector current (Ic) capability, and high gain bandwidth product (fT). Its maximum collector current and collector-emitter voltage (Vce) are 400mA and 65V, respectively. In addition, its maximum operating temperature range is from -65 to +150°C.
This device works on the principle of bipolar transistors, by which electric currents pass through channels between p- and n-type semiconductor materials. As current flows through the device, it becomes controllable and can be used for various purposes. In the BC846BM3T5G, a base current is applied to one side of the junction. The current flows through the channels formed between the p- and n-type materials and is amplified by the current gain of the device, allowing it to be used in a number of applications.
This transistor can be used as both an amplifier and a switch. As an amplifier, it can be used to amplify small electric signals, allowing them to pass through a device or electronic circuit without any losses. As a switch, it can be used to turn on and off electric signals, forming an integral connection or disconnection between a circuit’s components. It is also commonly used for circuit protection and for interfacing digital logic components.
The BC846BM3T5G is a general-purpose single-bipolar transistor, designed for a range of applications including industrial and automotive. Its main features include a very low collector-base breakdown voltage (Vce(sat)), high collector current (Ic) capability, and high gain bandwidth product (fT). It works on the principle of bipolar transistors by which electric currents pass through channels between p- and n-type semiconductor materials, and is mainly used as an amplifier and a switch.
The specific data is subject to PDF, and the above content is for reference
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