BC 817-40W E6327 Allicdata Electronics
Allicdata Part #:

BC817-40WE6327-ND

Manufacturer Part#:

BC 817-40W E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.5A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 170MHz 250m...
DataSheet: BC 817-40W E6327 datasheetBC 817-40W E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BC817
Description

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BC 817-40W E6327 is a single bipolar transistor designed to be used in a wide variety of applications such as audio circuits, logic circuits, switching and flipping circuits, and amplifiers. It has been designed to produce a high C-E voltage gain and low power consumption for extended battery life.

Application Field

BC 817-40W E6327 is a good choice for use in high-performance switching and amplifier circuits. The high C-E voltage gain makes it especially suitable for use in logic circuits, audio circuits, and video circuits. This transistor is also quite useful for driving loads and for providing higher current gain than otherwise possible.

Working Principle

The BC 817-40W E6327 is a three-terminal device with a collector, base, and emitter. The base-collector junction works as a diode and is forward-biased when a voltage greater than 0.3 V is applied. A greater voltage applied to the base-collector junction increases the current flow through the transistor. The emitter works as a source of electrons and current flows when the emitter-base junction is forward-biased. At this point the transistor turns on, allowing current to flow from collector to emitter. As the current passing through the transistor increases, the base-collector junction becomes more and more forward-biased. This voltage gain between the collector and the emitter is what is known as the C-E voltage gain.

The C-E voltage gain is the difference between the collector voltage and the emitter voltage. It is the voltage applied to the base-collector junction multiplied by the collector current. This is what makes BC 817-40W E6327 an ideal choice for logic circuits, audio circuits, and video circuits. The high C-E voltage gain helps to reduce power consumption, and the low power consumption results in increased battery life.

Conclusion

BC 817-40W E6327 is an excellent single bipolar transistor for a wide range of applications such as audio, logic, switching, and amplifier circuits. It has a powerful C-E voltage gain, and its low power consumption makes it highly suitable for use in circuits with extended battery life. Its versatility and efficiency make it an excellent choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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