| Allicdata Part #: | BC856BWE6433-ND |
| Manufacturer Part#: |
BC 856BW E6433 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS PNP 65V 0.1A SOT-323 |
| More Detail: | Bipolar (BJT) Transistor PNP 65V 100mA 250MHz 250m... |
| DataSheet: | BC 856BW E6433 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
| Power - Max: | 250mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | PG-SOT323-3 |
| Base Part Number: | BC856 |
Description
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<H2>BC 856BW E6433 Application Field and Working Principle</H2><p>The BC 856BW E6433 is a high power, 50V N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for a wide range of applications, including high-power switching, protection circuits, and logic level shifting.</p><p>The BC 856BW E6433 is classified as a Bipolar-Junction Transistor (BJT) Single. A BJT is a semiconductor device composed of three layers. It has two “base” layers of semiconductor material and a layer of semiconductor material connecting the two base layers, known as the “emitter”. </p><p>It is made up of a P-channel MOSFET and an N-channel MOSFET, both of which are junction devices. These devices are commonly used as switches, either to power up a device or to cut off power. They are also used to divide currents, providing high-frequency switching, or as logic level shifters, allowing data to be transferred between memory and processor or between device and processor.</p><p>The basic principle of operation of a BJT is based on the rectifying action of the two-level PN junction. In a BJT, two electrodes –the emitter and the collector –are on either side of the junction. The current flow between them is proportional to the applied voltage. When a forward bias voltage is applied to the junction, electrons are attracted to the collector, producing an increase in current. Reversing the bias can turn off the current flow. </p><p>The application of the BC 856BW E6433 includes high-power switching, protection circuits and logic level shifting. For example, in protection circuits, the transistor can be used to detect short-circuits and thermal overload conditions. It can also be used for power switching, as it is capable of handling high-current and voltage levels. In logic level shifting, it can help to increase the speed of communication between a device\'s memory and processor, or between two devices.</p><p>The BC 856BW E6433 is capable of high-performance operation due to its low on-state resistance and high breakdown voltage. Its high gain, low noise, and high switching speed make it an ideal selection for a variety of applications. Furthermore, its wider range of applications make it suitable for use in automotive, industrial, and consumer applications.</p></html>The specific data is subject to PDF, and the above content is for reference
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BC 856BW E6433 Datasheet/PDF