
Allicdata Part #: | BC858BWT106-ND |
Manufacturer Part#: |
BC858BWT106 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 350m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.07000 |
10 +: | $ 0.06790 |
100 +: | $ 0.06650 |
1000 +: | $ 0.06510 |
10000 +: | $ 0.06300 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | BC85* |
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The BC858BWT106 is a type of transistor from NXP Semiconductors (formerly Philips Semiconductors) that falls into the category of single bipolar junction transistors (BJT). This selection of transistor is perfect for a number of medium current applications, such as amplifying signals and switch circuits.
The BC858BWT106 is relatively small compared to other transistors, measuring to a length of just 2.8mm and a width of 1.6mm. This small size makes the BC858BWT106 suitable for use in small-scale circuit boards and devices.
The BC858BWT106 has an important electrical specification, which must be taken into account when used in a circuit. Firstly, this transistor has a maximum collector current of just 200mA (A = 20mA). Additionally, it has a max voltage of 45V and a max power dissipation of 500mW. This gives the BC858BWT106 an ideal score range of −65 to +185°C.
The BC858BWT106 is designed for use in low frequency device applications, such as amplifiers and switching circuits. This transistor is able to operate at frequencies up to 100MHz, which is more than enough for a variety of small-scale electronics and applications.
In terms of its operation, the BC858BWT106 operates with three layers. The first layer is the base layer and is responsible for the emission of electrons from the emitter into the base and collector layers. The second layer, the collector layer, is responsible for collecting the electrons and preventing them from recombining with positive ions in the base layer. The third layer, the emitter layer, is responsible for sending electrons out of the transistor and into the other layers.
In terms of power supply, the BC858BWT106 operates between 3 and 12 volts and has a maximum power of 500mW. This makes it suitable for use in many types of circuits and devices, such as amplifiers and switch circuits.
Since the BC858BWT106 has a relatively low power consumption, it is also ideal for many types of battery-operated electronics. Additionally, this transistor has a particularly good level of thermal immunity, with a maximum temperature rating of +185°C, making it suitable for use in a wide range of environments.
Overall, the BC858BWT106 is a great transistor for a number of medium current applications. It is small in size, low in power consumption, and operates at frequencies up to 100MHz. Additionally, because of its low power consumption, this type of transistor is also suitable for use in battery-powered circuits.
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