BC858BWT106 Allicdata Electronics
Allicdata Part #:

BC858BWT106-ND

Manufacturer Part#:

BC858BWT106

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 30V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 350m...
DataSheet: BC858BWT106 datasheetBC858BWT106 Datasheet/PDF
Quantity: 1000
1 +: $ 0.07000
10 +: $ 0.06790
100 +: $ 0.06650
1000 +: $ 0.06510
10000 +: $ 0.06300
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: BC85*
Description

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The BC858BWT106 is a type of transistor from NXP Semiconductors (formerly Philips Semiconductors) that falls into the category of single bipolar junction transistors (BJT). This selection of transistor is perfect for a number of medium current applications, such as amplifying signals and switch circuits.

The BC858BWT106 is relatively small compared to other transistors, measuring to a length of just 2.8mm and a width of 1.6mm. This small size makes the BC858BWT106 suitable for use in small-scale circuit boards and devices.

The BC858BWT106 has an important electrical specification, which must be taken into account when used in a circuit. Firstly, this transistor has a maximum collector current of just 200mA (A = 20mA). Additionally, it has a max voltage of 45V and a max power dissipation of 500mW. This gives the BC858BWT106 an ideal score range of −65 to +185°C.

The BC858BWT106 is designed for use in low frequency device applications, such as amplifiers and switching circuits. This transistor is able to operate at frequencies up to 100MHz, which is more than enough for a variety of small-scale electronics and applications.

In terms of its operation, the BC858BWT106 operates with three layers. The first layer is the base layer and is responsible for the emission of electrons from the emitter into the base and collector layers. The second layer, the collector layer, is responsible for collecting the electrons and preventing them from recombining with positive ions in the base layer. The third layer, the emitter layer, is responsible for sending electrons out of the transistor and into the other layers.

In terms of power supply, the BC858BWT106 operates between 3 and 12 volts and has a maximum power of 500mW. This makes it suitable for use in many types of circuits and devices, such as amplifiers and switch circuits.

Since the BC858BWT106 has a relatively low power consumption, it is also ideal for many types of battery-operated electronics. Additionally, this transistor has a particularly good level of thermal immunity, with a maximum temperature rating of +185°C, making it suitable for use in a wide range of environments.

Overall, the BC858BWT106 is a great transistor for a number of medium current applications. It is small in size, low in power consumption, and operates at frequencies up to 100MHz. Additionally, because of its low power consumption, this type of transistor is also suitable for use in battery-powered circuits.

The specific data is subject to PDF, and the above content is for reference

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