BC847BLP4-7B Allicdata Electronics
Allicdata Part #:

BC847BLP4-7BDITR-ND

Manufacturer Part#:

BC847BLP4-7B

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 45V 0.1A DFN1006H4-3
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250m...
DataSheet: BC847BLP4-7B datasheetBC847BLP4-7B Datasheet/PDF
Quantity: 1000
10000 +: $ 0.08843
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1006-3
Base Part Number: BC847
Description

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Bipolar Junction Transistors (BJTs) are very versatile and reliable type of transistors. The BC847BLP4-7B is a NPN Silicon BJT primarily used as an amplifier in a variety of applications. Designed to be low-cost, the BC847BLP4-7B can be used in voltage and current amplifiers, receivers, switches, converters, and a variety of other electrical applications that require a device with low noise and good linearity.

The BC847BLP4-7B features a collector-base breakdown voltage of 45V and an Emitter-base breakdown voltage of 7V. Power dissipation of the device is 300mW. The collector current of the BC847BLP4-7B is equal to 50mA, with a saturation voltage of 0.2V. The maximum operating temperature of the device is 150°C, and the maximum junction temperature is 175°C. The device also has a maximum collector-emitter voltage of 45V, and a maximum collector-emitter voltage of 40V.

The BC847BLP4-7B is often used in voltage and current amplifiers, due to its low-cost design and low noise characteristics. The device is used as an amplifier in many different applications, including receivers, switches, converters, and even digital logic. The BC847BLP4-7B is also frequently used as a switch in many low-power electrical applications and can be used as a buffer in various power circuits.

The BC847BLP4-7B works in the same way as any other bipolar junction transistor. It consists of three terminals: the base, the emitter, and the collector. The base is the controlling terminal of the device, which controls the number of carriers that enter or leave the collector. The emitter is the “output” terminal which, when a current is applied to the base, releases electrons to the collector. The collector is the “input” terminal and it is the terminal where the electrons enter or leave the device.

The working principle of the BJT is based on the fact that current can flow through the collector or emitter depending on the voltage applied to the base. When a positive voltage is applied to the base, the collector current is controlled by the base current and its voltage. This is known as forward bias, and it results in a large current flow through the collector. An opposite voltage at the base results in a reverse bias, or small collector current. This is due to a very low base current in this case, which is almost always much less than the collector current.

The BC847BLP4-7B is a great device for many small signal applications, due to its low-cost design and reliable performance. This device can be used in voltage and current amplifiers, receivers, switches, converters, and logic circuits. It is also a great choice for most low-power electrical applications due to its low power dissipation and good linearity. The device works in the same way as any other bipolar junction transistor and is a great choice for any application that requires a reliable and versatile device.

The specific data is subject to PDF, and the above content is for reference

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