BC859CW/ZLF

The BC859CW/ZLF family of transistors is a single-pack bipolar junction transistor (BJT) which, due to its high-speed switching characteristics and wide range of operating conditions, is suitable for applications in a variety of areas.

The BC859CW/ZLF is a current-gain device, and is usually used as an amplifier, switch, or signal source in electronic circuits. In a BJT, electrons flow from the emitter to the collector, and the current gain (units of amperes/volt) is determined by the ratio of the collector current to the emitter current. In the BC859CW/ZLF, an integrated base-emitter resistive junction is used in order to control the current flow between the base and the collector. This integrated junction results in higher switching speeds and improved operating temperature ranges.

The operating conditions of the BC859CW/ZLF are defined by its VCE (collector-emitter) rating (VCE,min - VCE,max) and the maximum allowable power dissipation (PD). The DC current gain of the BJT, hFE, is also given, and this provides the user with an indication of the amount of amplifying gain possible. In addition to the engineers’ specifications, the user should take note of any internal protection features incorporated into the device.

Due to their high-speed switching characteristics, BC859CW/ZLF transistors are suitable for couples of different applications including power amplifiers, high-speed switching, and multiplexers/demultiplexers. The wide VCE operating range allows for the transistor to be used in applications ranging from low-voltage (3.3V) to high-voltage (150V), and the wide range of gains, hFE, enable the device to be used in a variety of circuit configurations.

For high-power applications, the collector-emitter voltage and power dissipation ratings should be observed in order to protect the device from

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