BC33716TF Allicdata Electronics
Allicdata Part #:

BC33716TF-ND

Manufacturer Part#:

BC33716TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625m...
DataSheet: BC33716TF datasheetBC33716TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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The BC33716TF is a single-bipolar transistor component manufactured by Diodes Incorporated. It is part of the family of transistors called junction field-effect transistors (FET).

The BC33716TF device is designed to be used in military, aerospace and other harsh operating environments. It is a high-performance component manufactured to meet or exceed the requirements of MIL-PRF-19500, JAN A1mil-std-883, and ANSI/ESD S20.20. Its low profile package allows it to be mounted in areas with restricted space.

The BC33716TF has a wide range of application fields. It is suitable for use in military and aerospace applications, high-end medical equipment, and high-speed data communication systems. It is also suitable for use in high-temperature and low-power applications, low-noise applications, and sound/noise level measurement.

The BC33716TF works on a principle of operation called bipolar junction transistor (BJT). A BJT is an active semiconductor device with three terminals, the collector (C), base (B), and emitter (E). In an NPN transistor, the voltage applied across the collector-base (C-B) junction will cause the transistor to be turned on, while a voltage applied across the emitter-base (E-B) junction will cause the transistor to be turned off. The current flowing through the collector-base junction is controlled by the current into the base, and the current flowing through the emitter-base junction is controlled by the voltage across the emitter-base junction.

In addition, the BC33716TF comes with a thermal protection circuit that provides thermal protection for the device in case of excessive temperature. This includes an LED indicator to warn users when the device is getting too hot. It also includes a shutdown circuit that shuts off the device when the temperature exceeds a certain level.

In summary, the BC33716TF is a high-performance, single-bipolar transistor component designed for use in harsh operating environments. It has a wide range of application fields, including military and aerospace applications, high-end medical equipment, and high-speed data communication systems. Its low profile package allows it to be mounted in areas with restricted space. It operates with a principle of bipolar junction transistor (BJT) and also provides thermal protection and shutdown circuits.

The specific data is subject to PDF, and the above content is for reference

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