BC337-40ZL1 Allicdata Electronics
Allicdata Part #:

BC337-40ZL1-ND

Manufacturer Part#:

BC337-40ZL1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625m...
DataSheet: BC337-40ZL1 datasheetBC337-40ZL1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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The BC337-40ZL1 is a silicon NPN bipolar junction transistor (BJT) developed by STMicroelectronics, a semiconductor company based in one of Europe’s largest industrial regions. A bipolar transistor is a type of semiconductor device that can be used in a variety of applications, from controlling signals to amplifying currents. The BC337-40ZL1 is specifically designed for low-power analog applications such as detectors and converters, as well as very low power DC-DC applications. With its maximum collector current of 800 mA and a collector-emitter voltage of 45 V, the BC337-40ZL1 is a reliable and cost-efficient solution for applications requiring low power and low voltage.

The BC337-40ZL1 offers many features that make it ideal for use in low-power, low-voltage applications. First and foremost, the device’s low power consumption results in low heat dissipation, which increases its efficiency and reliability. As a result, the transistor can be used in a variety of applications where energy efficiency is a major factor. The device’s small power requirements also make it suitable for battery-powered designs. Additionally, the BC337-40ZL1 provides excellent protection against short circuits, and its low input impedance makes it perfectly suited for logic-level switching.

The BC337-40ZL1 is capable of operating at very low power and voltage levels due to its bipolar junction transistor design. A bipolar junction transistor, or BJT, is made up of two p-type semiconductor layers and one n-type semiconductor layer. The n-type semiconductor layer is known as the collector, and the p-type layers are the emitters. When a positive voltage is applied to the collector, it attracts electrons from the emitter side and sets up a current flow across the two p-n junctions. This current flow is then able to control signals and condition currents within a circuit.

The BC337-40ZL1 is designed for use in low voltage, low power analog applications, such as detectors and converters. The device’s low-power design allows it to be used in battery-powered designs, and its small power requirements make it suitable for low power, low voltage designs. Additionally, the BC337-40ZL1 offers excellent protection against short circuits and its low input impedance makes it an ideal solution for logic-level switching. This makes the BC337-40ZL1 an attractive solution for a variety of low-power, low-voltage analog applications.

The specific data is subject to PDF, and the above content is for reference

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