| Allicdata Part #: | BC337-40B1G-ND |
| Manufacturer Part#: |
BC337-40 B1G |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | TRANSISTOR, NPN, 45V, 0.8A, 250A |
| More Detail: | Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625m... |
| DataSheet: |  BC337-40 B1G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.02415 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 800mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 5V |
| Power - Max: | 625mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92 |
Description
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The BC337-40 B1G is a popular NPN transistor manufactured and distributed by ON Semiconductor. It is one of the most common transistors and can be found in many consumer electronic applications. This article will discuss the application fields and working principles of the BC337-40 B1G transistor. The BC337-40 B1G transistor is designed for general purpose switching and amplification applications. It is commonly used for small signal applications, such as amplifying radio signals, and for controlling loads in switching applications. It can also be used for voltage regulation, noise reduction, and with logic circuits. The BC337-40 B1G transistor is fabricated using an NPN (Negative Positive Negative) structure. This type of transistor consists of three layers, the Base, Co llector, and Emitter. The Base is the surface layer of the transistor, which is made up of a group of p-type semiconductor material. The Collector is the bottom layer, and is made up of n-type material. The Emitter is the middle layer, and is also made up of n-type material. When the base is connected to a positive voltage, it allows electrons, or ‘holes’, to flow from the emitter to the collector. This flow of electrons is called the emitter current. The emitter current will then flow through the collector layer, creating a relatively large current. This current is known as the collector current. The current gain of the transistor is defined as the ratio of the collector current to the emitter current. The current gain of the BC337-40 B1G can be as high as 1000. The BC337-40 B1G also has an ‘on-state’ resistance, or collector-emitter saturation voltage. This is the voltage that must be applied to the transistor’s base to make it conduct. The BC337-40 B1G can operate at voltages ranging from -2.0V to -6T0V. The BC337-40 B1G transistor can also be used as an amplifier. When a signal is applied to the transistor’s base, it will amplify the signal. The amount of amplification depends on the current gain of the transistor. Generally, transistors with a higher current gain will have higher gain parameters. In conclusion, the BC337-40 B1G is a popular transistor used for general purpose switching and amplification applications. It is commonly used for small signal applications, such as amplifying radio signals, and for controlling loads in switching applications. The transistor has an NPN structure, a high current gain, and an ‘on-state’ resistance range of -2.0V to -6T0V. It can also be used as an amplifier.
The specific data is subject to PDF, and the above content is for reference
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