BC338TF Allicdata Electronics
Allicdata Part #:

BC338TF-ND

Manufacturer Part#:

BC338TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625m...
DataSheet: BC338TF datasheetBC338TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC338
Description

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BC338TF is a single transistor in the bipolar (BJT) category. It is an NPN small signal transistor with features such as low Vce(sat), high current gain band-width, and low collector-emitter saturation voltage. This transistor is used in telecommunications applications and consumer electronic products such as TVs and audio amplifiers as well as numerous other circuitings.

The BC338TF is a vertical NPN transistor which has a maximum rating of 25V and 200mA. It has a transition frequency of 200MHz and collector-emitter breakdown voltage of 39V. This transistor features low emitter-base voltage ranges between 0.15V and 0.5V, making it a great choice for high current gain, low noise and good switching performance in a variety of digital and analog applications. It also has a low operating temperature range of -55°C to +150°C as well as a storage temperature range of -55°C to +150°C, making it suitable for most applications.

In order to understand its application field and working principle, it is necessary to understand its structure and construction. The BC338TF is an NPN transistor that consists of a layer of an N-type semiconductor sandwiched between two P-type semiconductors. This arrangement forms a PNP junction, with the N-type layer sandwiched in the middle. The N-type layer is connected to the external circuit and the P-type layers form the transistor’s emitter and collector. When a positive voltage (Vce) is applied to the transistor’s emitter-base junction, the PN junction between the emitter and the base will become forwardly biased. This causes electrons to be injected into the P-type layers and allows current to flow from the emitter to the collector, while a negative DC voltage is applied to the collector-base junction.

The BC338TF also comes with a feature known as an hFE or current gain band width, which is a measure of how much current will flow through the transistor for a given base current. This is a very important parameter in determining the transistor’s performance. As the hFE increases, the transistor’s current gain will increase, allowing more current to flow through it and allowing it to provide higher gain at higher frequencies. At the same time, the hFE also affects the transistor’s power dissipation.

The BC338TF is widely used in various analog and digital applications. It can be used in portable radios, switching amplifiers, for class-D amplifiers and for analog signals. It is also widely used in logic circuits where it serves as a simple switch between two points that can be controlled with a logic signal. It is widely used in telecommunications equipment, home theatres, and other consumer electronics. Additionally, it is often used as a driver transistor in amplifier circuits, or as a current switch in analogue applications.

In conclusion, the BC338TF is a single transistor in the bipolar (BJT) category with a wide range of applications. It features low Vce(sat), high current gain bandwidth, and low collector-emitter saturation voltage, making it an ideal choice for many applications. Its NPN construction allows it to be used in analog and digital circuits and its hFE allows it to have greater control over current gain and power dissipation. The transistor is also extremely reliable, making it suitable for use in a wide range of products.

The specific data is subject to PDF, and the above content is for reference

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