BC33716_J35Z Allicdata Electronics
Allicdata Part #:

BC33716_J35Z-ND

Manufacturer Part#:

BC33716_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625m...
DataSheet: BC33716_J35Z datasheetBC33716_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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.

BC33716_J35Z is a type of single bipolar junction transistor (BJT). Transistors are devices made of semiconductor materials such as silicon, germanium, and gallium arsenide that can amplify signals, control current, and switch digital signals from one device to another. A BJT is one type of transistor specifically designed for use in analog circuits. The BC33716_J35Z is a BJT made of a silicon die, and it is designed to be used at high temperatures (up to 150°C). It is rated at 8A and has a voltage rating of 16V.

The BC33716_J35Z is mainly used in the automotive industry due to its high temperature operation. It is used in a variety of automotive applications, including voltage regulators, overcurrent protection devices, and power steering systems. It is also used in electronic components such as transistors, diodes, and optoelectronic devices. In addition, it can be used in industrial applications such as medical imaging, solid-state lighting, and renewable energy.

The working principle of the BC33716_J35Z is based on the principles of field-effect transistors (FETs). FETs are devices that use an electric field to modulate the conductivity of a semiconductor material. In the case of the BC33716_J35Z, the electric field is created by the introduction of two base (gate) voltages. One voltage is applied to the source and drain connections of the transistor and the other to the base junction. When one voltage is more positive than the other, the transistor is said to be in an "on" state and can allow current to flow through it. When the two voltages are equal, the transistor is in an "off" state and no current can flow through it.

In addition to the two gate voltages, the BC33716_J35Z also uses a collector (drain) voltage to control the amount of current that can flow through the device. This is done by adjusting the amount of resistance between the collector and emitter connections of the device. By adjusting this resistance, the amount of current that can flow through the transistor can be controlled. This makes the BC33716_J35Z ideal for applications where the amount of current flowing through a device needs to be regulated or controlled.

The BC33716_J35Z is an excellent choice for applications that require high power, heat resistance, and reliable performance. Its high temperature operation makes it suitable for use in automotive and industrial applications, while its regulation capabilities make it ideal for use in electronic components and optoelectronic devices. With its wide range of applications and capabilities, it is easy to see why the BC33716_J35Z is becoming a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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