BC636,116 Allicdata Electronics
Allicdata Part #:

BC636,116-ND

Manufacturer Part#:

BC636,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 145MHz 830mW T...
DataSheet: BC636,116 datasheetBC636,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 830mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC636
Description

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The BC636,116 is a type of single bipolar transistor (BJT) used in a variety of applications. It can be used as an amplifier, switch, or as a signal coupler. The BC636,116 also has low noise and high operating frequency, which makes it ideal for a range of applications.

Overview

The BC636,116 features a PNP configuration and an emitter-base breakdown voltage of up to 500 volts. It requires a minimum of 5 volts between base and emitter for proper switching. The collector-emitter saturation voltage is typically 0.2 volts, and the collector-base saturation is typically 1.2 volts. It also has a power dissipation of up to 1 watt and a maximum collector current of up to 15 amps. The BC636,116 also has excellent linearity and low harmonic distortion.

Applications

The BC636,116 is useful for a variety of applications, including:

  • Power amplifier circuits
  • Switch-mode power supplies
  • Battery-charging circuits
  • Stepper motors
  • AC power supplies
  • Antenna couplers

Working Principle

The working principle of the BC636,116 is based on the three layers of charge that make up a bipolar transistor. When current flows through the base layer, it creates a conductive pathway between the emitter and collector layers. This process is known as base-driven conduction. As the current passes through the base layer, the collector-emitter voltage is amplified, which allows for increased current flow.

The current gain of the BC636,116 is typically 200-300. This means that for every 1 current unit applied at the base, 200-300 current units flow through the collector-emitter. The higher the current gain, the more efficient the BC636,116 is at performing its tasks such as amplification, signal coupling, and switching.

Conclusion

The BC636,116 is a versatile single bipolar transistor (BJT). It’s suitable for a variety of applications thanks to its low noise, high operating frequency, and linearity characteristics. The BC636,116 also features excellent current gain, making it a reliable choice in signal and power amplifier circuits, switch mode power supplies, battery-charging circuits, stepper motors, and AC power supplies, among others.

The specific data is subject to PDF, and the above content is for reference

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