BC636BU Allicdata Electronics
Allicdata Part #:

BC636BU-ND

Manufacturer Part#:

BC636BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 100MHz 1W Thro...
DataSheet: BC636BU datasheetBC636BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC636
Description

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The BC636BU is a transistor designed for use in a wide range of applications, such as switching, power amplification, and signal conditioning. This transistor is a single, bipolar junction transistor (BJT) designed for low to medium power applications.

It is an NPN transistor which consists of three terminals, the base, collector, and emitter. The base is the control terminal and is used to control the current flow from the collector to the emitter.The importance of the transistor lies in its ability to provide gains in current and voltage when used in circuit configurations like amplifiers.

The BC636BU has a power dissipation of 250mW and can operate at 125MHz. The transistor has a maximum collector-emitter voltage of 35V and a maximum collector current of 300mA. It is primarily used in signal conditioning applications and switching, but it can also be used in low to medium-power signal amplification.

To understand the working principle of the BC636BU, it’s important to understand the working of a transistor. At its simplest level, a transistor can be thought of as a switch. It is made up of two p-type semiconductors and one n-type semiconductor. When a voltage is applied to the base terminal, it allows current to flow from the collector to the emitter.

The amount of current that can flow from the collector to the emitter is determined by the amount of voltage applied to the base terminal. This creates a current gain from the collector to the emitter as the current at the collector is greater than the current at the emitter.

The BC636BU transistor is an NPN transistor which has an excellent gain-bandwidth product and is ideal for use in low to medium-power applications. It has a high voltage and current collector-emitter rating and can be used in a variety of applications such as signal conditioning and general-purpose switching. Its high gain, along with its low power dissipation, make it a desirable choice for many applications, both commercial and industrial.

The specific data is subject to PDF, and the above content is for reference

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