Allicdata Part #: | BC635ZL1-ND |
Manufacturer Part#: |
BC635ZL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 1A 200MHz 625mW T... |
DataSheet: | BC635ZL1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC635 |
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The BC635ZL1 transistor is a bipolar junction transistor (BJT) with a single emitter and collector, specifically designed for use in low power applications. It has an increased voltage margin compared to similar transistors, and a low gate-to-emitter capacitance of 1.5 pF. This makes it suitable for applications requiring high-frequency operation, such as switching, modulation and linear amplification, as well as power supplies and microcontroller applications.
The BC635ZL1 incorporates a unique feature known as "gate trimming". This allows the gate voltage (Vce) of the transistor to be tuned to the exact requirements of the application. This ensures that the transistor operates at its optimum efficiency, even when the environment in which it operates changes.
The BC635ZL1 is rated for a total power dissipation of 1 Watt. It operates over a temperature range of -55°C to +125°C. The transistor can handle up to 25 volts at 500mA when using its full power rating.
The BC635ZL1 has a forward characteristic with a maximum current gain (hFE) of 100 at 1mA and a breakdown voltage (BV) of 70V. The reverse voltage is limited at 25V. It also has a low base to emitter saturation voltage of 0.37V. The total delay time of the transistor (τ) is estimated to be 25nS.
The BC635ZL1 can be used in a wide variety of applications, including switching, modulation, linear amplification, power supplies, robotic systems, industrial control and microcontroller applications. It is an ideal choice for use in embedded systems, motor control systems, power amplifiers and audio applications.
In conclusion, the BC635ZL1 is a high-performance, low-power bipolar junction transistor designed for use in a variety of low-power applications. Its gate trimming feature allows the Vce to be fine-tuned to the exact specifications of the application, resulting in higher efficiency. The transistor is rated for 1 Watt of power dissipation and has a maximum current gain of 100 at 1mA and a breakdown voltage of 70V. It can be used in various applications requiring high-frequency operation, including switching, modulation, linear amplification, power supplies and microcontroller applications.
The specific data is subject to PDF, and the above content is for reference
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