BC638G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 2V
Power - Max:	625mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC638

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BC638G is a type of NPN, general purpose, single bipolar junction transistor. It can be used in many types of systems, and the fact that it is encapsulated in a three-powered package means it can be used in almost any application that requires a transistor. BC638G is most commonly used for switching and amplification applications. Its high breakdown voltage, current gain, and low noise level make it suitable for amplifying low-level signals to large current levels. Additionally, its low power consumption also makes it suitable for use in battery operated systems. What is Bipolar Junction Transistor? A bipolar junction transistor or BJT is a type of transistor made up of two p-type and n-type layers. The p-type layer of the BJT is connected to the base of the transistor, while the n-type layer is connected to the collector. The BJT uses the principle of the diffusion current to control the current flowing between the collector and the emitter. The junction between the base and the collector is known as the base-collector junction and the junction between the emitter and the collector is referred to as the emitter-collector junction. What is the working principle of BC638G? The BC638G\'s working principle is known as the semiconductor effect. In this process, the base receives a negative voltage while the emitter is connected to ground. The electrons within the base (p-type layer) are attracted to the negative voltage and are pushed away from the emitter (n-type layer). This creates a potential difference which is used to control the current flowing between the emitter and the collector. The BC638G is also able to amplify the small current flowing through the base and turn it into a larger current flowing through the collector. This makes it suitable for amplification applications where a small signal needs to be amplified to a larger current level. The current gain of the BC638G is known as the βF, or forward beta. The BC638G typically has a βF of around 100, meaning it amplifies the input current by 100 times its original size. Another important feature of the BC638G is its breakdown voltage. The BC638G can safely handle voltages up to 30 volts. This makes it suitable for use in high voltage applications where a transistor with a low breakdown voltage would be unsuitable. The BC638G also has a low noise level when compared to other transistor types. This makes it suitable for use in sensitive applications, such as audio amplifiers, where a transistor with a high noise level would be unsuitable.What are the Application fields of BC638G? The BC638G is most commonly used in switching and amplification applications, due to its high current gain, high breakdown voltage, and low noise level. It has found widespread use in a variety of applications, such as: • Audio amplifiers• Power switching circuits• Motor speed control• Solenoid and relay control • GPO logic• Automotive electronics• UPS systems• Voltage regulatorsConclusionThe BC638G is a widely used NPN single bipolar junction transistor. It is most commonly used in switching and amplification applications due to its high current gain, high breakdown voltage, and low noise level. Additionally, its low power consumption and wide range of applications makes it suitable for use in battery operated systems.

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